Abstract: A method of measuring a width of an undoped or lightly doped polysilicon line is disclosed. The width measuring method includes generating carriers in the polysilicon line with an energy source; measuring a capacitance between the polysilicon line and a substrate separated from the polysilicon line by a dielectric layer; and determining a line width of said polysilicon line from the measured capacitance. The capacitance measurement includes connecting first and second probes to the polysilicon line; connecting a third probe to the substrate; connecting a first terminal of a capacitance meter to the first and second probes; connecting a second terminal of the capacitance meter to the third probe; and applying a direct current bias across the first and second probes. A capacitor may be connected between the first and second probes. Further steps include, connecting a fourth probe to a conductor that supports the substrate; and connecting the fourth probe to the third probe.

Abstract: A method of measuring a width of an undoped or lightly doped polysilicon line is disclosed. The width measuring method includes generating carriers in the polysilicon line with an energy source; measuring a capacitance between the polysilicon line and a substrate separated from the polysilicon line by a dielectric layer; and determining a line width of said polysilicon line from the measured capacitance. The capacitance measurement includes connecting first and second probes to the polysilicon line; connecting a third probe to the substrate; connecting a first terminal of a capacitance meter to the first and second probes; connecting a second terminal of the capacitance meter to the third probe; and applying a direct current bias across the first and second probes. A capacitor may be connected between the first and second probes. Further steps include, connecting a fourth probe to a conductor that supports the substrate; and connecting the fourth probe to the third probe.

Abstract: A method of measuring a width of an undoped or lightly doped polysilicon line is disclosed. The width measuring method includes generating carriers in the polysilicon line with an energy source; measuring a capacitance between the polysilicon line and a substrate separated from the polysilicon line by a dielectric layer; and determining a line width of said polysilicon line from the measured capacitance. The capacitance measurement includes connecting first and second probes to the polysilicon line; connecting a third probe to the substrate; connecting a first terminal of a capacitance meter to the first and second probes; connecting a second terminal of the capacitance meter to the third probe; and applying a direct current bias across the first and second probes. A capacitor may be connected between the first and second probes. Further steps include, connecting a fourth probe to a conductor that supports the substrate; and connecting the fourth probe to the third probe.

Abstract: A method of measuring a width of an undoped or lightly doped polysilicon line is disclosed. The width measuring method includes generating carriers in the polysilicon line with an energy source; measuring a capacitance between the polysilicon line and a substrate separated from the polysilicon line by a dielectric layer; and determining a line width of the polysilicon line from the measured capacitance. The capacitance measurement includes connecting first and second probes to the polysilicon line; connecting a third probe to the substrate; connecting a first terminal of a capacitance meter to the first and second probes; connecting a second terminal of the capacitance meter to the third probe; and applying a direct current bias across the first and second probes. A capacitor may be connected between the first and second probes. Further steps include, connecting a fourth probe to a conductor that supports the substrate; and connecting the fourth probe to the third probe.

Abstract: A heating process of improving the magnetic and mechanical properties of ferromagnetic amorphous alloys wherein the amorphous ribbon is treated with rapid heating and rapid magnetic domain impacting in a direct heating manner by means of pulsed high current to improve the magnetism of ferromagnetic amorphous alloys with reduced or eliminated the annealing embrittlement thereof.The heating process is performed in the following conditions:pulse current density: J.gtoreq.10.sup.3 A/cm.sup.2pulse duration: tp=1 ns-100 msfrequency: f=1 Hz-1,000 Hzheating time: tn=1 sec.-100 secs.