Patents by Inventor James C. MacDonald

James C. MacDonald has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180171627
    Abstract: Precast wall systems and methods for constructing a high-rise building using the precast wall system is disclosed. In one embodiment, the system includes a plurality of interconnected precast panels, each having a top end plate, a bottom end plate, a plurality of vertical bars disposed between the end plates and a cementitious material encasing the vertical bars and defining a plurality of sides of the respective panel. A first of the precast panels has a first column member half defining a right side of the first panel, a second of the precast panels has a second column member half defining a left side of the second panel such that, when the right side of the first precast panel and the left side of the second precast panel are disposed horizontally adjacent to each other, the first column member half and the second column member half collectively form a column member.
    Type: Application
    Filed: February 14, 2018
    Publication date: June 21, 2018
    Applicants: Skidmore Owings & Merrill LLP, Newco Ventures LLC
    Inventors: Juan Carrion, William F. Baker, John A. Cavanagh, Robert C. Stewart, James C. MacDonald, Charles Besjak
  • Patent number: 6231923
    Abstract: A method and apparatus for producing a coating or a near net shaped monolithic ceramic part by chemical vapor deposition, where the resultant coatings or parts consume less deposit material and require less machining. Mandrel substrates are closely designed for producing a specific, near net shaped final part, including negative relief features. Several of the mandrel substrates are mounted through centers in a spaced relationship on one or more rotable shafts as tooling for a chemical vapor deposition furnace. The tooling is installed in a chemical vapor deposition furnace so that the shafts are oriented perpendicular and the substrate planar surfaces are parallel to the flow pattern of reactant gases through the furnace. The shafts are rotated during the deposition process so that the mandrel substrates each receive a uniformly distributed ceramic deposit in the near net shape of the final part.
    Type: Grant
    Filed: August 17, 1999
    Date of Patent: May 15, 2001
    Assignee: Tevtech LLC
    Inventors: Alexander Teverovsky, James C. MacDonald, Lee Erich Burns
  • Patent number: 5686195
    Abstract: The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.
    Type: Grant
    Filed: January 24, 1995
    Date of Patent: November 11, 1997
    Assignee: CVD, Inc.
    Inventors: Raymond L. Taylor, Lee E. Burns, James C. MacDonald
  • Patent number: 5476549
    Abstract: The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.
    Type: Grant
    Filed: February 24, 1995
    Date of Patent: December 19, 1995
    Assignee: CVD, Inc.
    Inventors: Raymond L. Taylor, Lee E. Burns, James C. MacDonald
  • Patent number: 5453233
    Abstract: A method and device are provided for reducing the loss of CVD manufactured parts due to cracking caused by mechanical stresses resulting from the mismatch of the coefficient of thermal expansion between the chemical vapor deposed part and the mandrel plate. The method and device provide a removable mandrel support which is removed after the chemical vapor deposition but prior to the cooling of the CVD part and the mandrel plates. This permits the CVD part to contract upon cooling without mechanical restriction, thus reduce cracking caused by contraction of the CVD part against a mold which does not contract substantially.
    Type: Grant
    Filed: April 5, 1993
    Date of Patent: September 26, 1995
    Assignee: CVD, Inc.
    Inventors: Alexander Teverovsky, James C. MacDonald
  • Patent number: 5383969
    Abstract: A process and apparatus for the manufacture of chemical vapor deposition deposited structures which comprises supplying a solid zinc metal continuously to a heated retort at a controlled rate. The retort is a body of refractory material having a top and a bottom and a traverse cross section which decreases from the top to the bottom of the retort. The zinc is melted, vaporized, and conveyed to a chemical vapor deposition zone defined by a number of heated mandrel plates where it is reacted with either hydrogen sulfide or hydrogen selenide to form a chemical vapor deposited structure. The process and apparatus provide for improved control over the evaporation rate of zinc and a reduction in the furnace volume needed to melt and vaporize the zinc.
    Type: Grant
    Filed: April 5, 1993
    Date of Patent: January 24, 1995
    Assignee: CVD, Inc.
    Inventors: Alexander Teverovsky, James C. MacDonald, Michael A. Pickering, Jeffery L. Kirsch
  • Patent number: 5354580
    Abstract: A process and apparatus for the manufacture of chemical vapor deposited silicon carbide which comprises conveying the reaction gases to a triangular chemical vapor deposition cell where material is deposited by chemical vapor deposition. The triangular cell provides a large surface area for deposition while occupying a minimum amount of the furnace floor surface area. The triangular cell has the added benefit in that deposited silicon carbide is of negligible thickness at the edges thereby permitting easy separation of material with a minimum of post deposition machining.
    Type: Grant
    Filed: June 8, 1993
    Date of Patent: October 11, 1994
    Assignee: CVD Incorporated
    Inventors: Jitendra S. Goela, Lee E. Burns, ALexander Teverovsky, James C. MacDonald
  • Patent number: 5183689
    Abstract: The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.
    Type: Grant
    Filed: July 15, 1991
    Date of Patent: February 2, 1993
    Assignee: CVD, Inc.
    Inventors: Raymond L. Taylor, Lee E. Burns, James C. MacDonald
  • Patent number: 4978577
    Abstract: An improved method of forming a ZnS layer on a ZnSe substrate by chemical vapor deposition of ZnS onto the ZnSe is disclosed in which the ZnS is contacted, prior to the chemical vapor deposition of the ZnS, with H.sub.2 S in the absence of zinc metal vapor to cause reaction of the H.sub.2 S and the surface of the ZnSe substrate.
    Type: Grant
    Filed: April 12, 1989
    Date of Patent: December 18, 1990
    Assignee: CVD Incorporated
    Inventors: Parul V. Purohit, Jeffery L. Kirsch, James C. MacDonald