Abstract: An ultraviolet-assisted chemical vapor deposition system for improving the adhesion, hardness, and thermal stability of organic polymer films deposited on semiconductor wafers is provided. The system includes an ultraviolet lamp and a tube-shaped monomer distribution system positioned over the wafer allowing ultraviolet irradiation of the wafer before, during and/or after deposition. Processes for depositing organic polymer films on semiconductor wafers are also provided. The processes include one or more depositions, one or more ultraviolet exposures, and one or more anneals.

Abstract: A method for low temperature chemical vapor deposition of an SiO.sub.2 based film on a semiconductor structure using selected alkoxysilanes, in particular tetramethoxysilane, trimethoxysilane and triethoxysilane which decompose pyrolytically at lower temperatures than TEOS (tetraethoxysilanes). Ozone is introduced into the reaction chamber to increase deposition rates, lower reaction temperatures and provide a better quality SiO.sub.2 film by generating a more complete oxidation. Ozone is also employed as a reactant for doping SiO.sub.2 based films with oxides of phosphorus and boron.