Abstract: An integrated circuit including one or more power devices, and circuitry which reliably (and independently) shuts down each power device that is detected to be in an undesired operating condition (e.g., one or both of an overcurrent condition and an overvoltage condition) that causes a thermal fault, but which does not shut down any power device that is not in such undesired operating condition. In typical implementations in which the integrated circuit has multiple power devices and an overvoltage detection circuit for each power device, the integrated circuit includes a thermal fault detection circuit and logic circuitry which receives the output of the thermal fault detection circuit and each overvoltage detection circuit. The logic circuitry generates signals which shut down appropriate ones of the power devices in response to the thermal fault detection and overvoltage detection signals it receives.

Abstract: A voltage-to-frequency converter wherein a monostable multivibrator is fed by an integrator which periodically activates a switchable current source coupled to the input of the integrator for a finite period of time and at a rate proportional to the level of an input voltage fed to such integrator. The monostable multivibrator includes nonsaturating switching transistors enabling effective operation of the converter over a relatively wide bandwidth. The converter also includes circuitry to temperature compensate the switchable current source enabling such current source to pass a current pulse having substantially the same finite time duration over the range of operating temperatures.

Abstract: A temperature compensated voltage reference circuit wherein a first circuit is provided for producing an output voltage at an output terminal, such circuit including a reference voltage device connected between a predetermined voltage potential and the output terminal, such reference voltage device producing a reference voltage which varies with temperature over a predetermined range of temperatures. A temperature compensation circuit is included which, in response to a compensating current, produces a compensating voltage in series with the reference voltage, such compensating voltage varying inversely to the voltage variation of the reference voltage over the predetermined range of temperatures, such compensating current passing serially through the reference voltage device and the compensating voltage producing means.

Abstract: An electronic circuit adapted to multiply/divide analog input signals, such circuit having a first set of four transistors with serially coupled base-emitter junctions arranged to produce an output current in the collector electrode of one of such transistors which is proportional to the product of currents fed into the collector electrodes of a second and third ones of the four transistors divided by current fed into the collector electrode of a fourth one of the transistors. The circuit includes a second set of four transistors, each one having a base electrode and an emitter electrode connected to the base electrode and emitter electrode, respectively, of a corresponding one of the first set of transistors to produce a current in the collector electrode thereof related to the current flow through the ohmic emitter resistance of the corresponding one of the transistors in the first set coupled thereto.

Abstract: A voltage-to-frequency converter wherein a monostable multivibrator is fed by an integrator which periodically activates a switchable current source coupled to the input of the integrator for a finite period of time and at a rate proportional to the level of an input voltage fed to such integrator. The monostable multivibrator includes nonsaturating switching transistors enabling effective operation of the converter over a relatively wide bandwidth. The converter also includes circuitry to temperature compensate the switchable current source enabling such current source to pass a current pulse having substantially the same finite time duration over the range of operating temperatures.

Abstract: A semiconductor voltage reference device formed by ion implanting particles into a semiconductor body having first and second doped regions of opposite type conductivity formed therein. Such particles are implanted with a peak concentration at a predetermined depth from a surface of the body, providing a third region of conductivity type opposite that of the first region and having a doping concentration greater than that of the second region. The particles extend beneath the surface of the body into the first and second regions, a junction being formed between the first and third regions beneath the surface of the body. Electrodes are provided in ohmic contact with the first and second doped regions. When the junction is reverse biased by applying a proper voltage across the electrodes the junction breaks down beneath the surface of the body establishing a fixed or reference voltage between the electrodes.

Abstract: An electronic circuit including an amplifier having an input adapted for coupling to an analog signal source; a current source coupled to the output of the amplifier; a feedback transistor having a collector electrode and emitter electrode connected in series between the output of the current source and the input of the amplifier; and a lead network, including a capacitor connected between the input and output of the amplifier, for stabilizing the electronic circuit. With such arrangement the current in the collector electrode of the feedback transistor rapidly becomes related to current fed to the input of the amplifier by the analog signal source.

Abstract: A temperature compensated, switchable current source wherein a Darlington pair of transistors in the output section of such current source is coupled to a source of switching signals through two electrical paths, each having a switching transistor and a diode network. The diode networks are arranged to produce a voltage variation at the input to the Darlington pair which varies inversely to the temperature variation developed across the base-emitter junctions of the Darlington pair of transistors. Coupling the Darlington pair of transistors to the source of switching signals through two switching transistors enables the current source to be rapidly driven from a conducting state to a nonconducting state in response to the switching signals.