Patents by Inventor James C. Vetter
James C. Vetter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10854492Abstract: An edge ring assembly is provided, including: an upper edge ring configured to surround an electrostatic chuck (ESC), the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface, the upper edge ring being disposed above the annular shelf; a lower inner edge ring disposed below the upper edge ring in the annular step and disposed over the annular shelf, the lower inner edge ring being defined from an electrically conductive material, the lower inner edge ring being electrically insulated from the ESC; a lower outer edge ring surrounding the inner edge ring, the lower outer edge ring being disposed below the upper edge ring in the annular step and disposed over the annular shelf, the lower outer edge ring being defined from an electrically insulating material.Type: GrantFiled: July 8, 2016Date of Patent: December 1, 2020Assignee: Lam Research CorporationInventors: William Frederick Bosch, Rajesh Dorai, Tamarak Pandhumsoporn, Brett C. Richardson, James C. Vetter, Patrick Chung
-
Patent number: 9659757Abstract: Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.Type: GrantFiled: October 29, 2012Date of Patent: May 23, 2017Assignee: Lam Research CorporationInventors: Andras Kuthi, Stephen Hwang, James C. Vetter, Greg Eilenstine, Rongping Wang, Tuan Ngo
-
Publication number: 20170053820Abstract: An edge ring assembly is provided, including: an upper edge ring configured to surround an electrostatic chuck (ESC), the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface, the upper edge ring being disposed above the annular shelf; a lower inner edge ring disposed below the upper edge ring in the annular step and disposed over the annular shelf, the lower inner edge ring being defined from an electrically conductive material, the lower inner edge ring being electrically insulated from the ESC; a lower outer edge ring surrounding the inner edge ring, the lower outer edge ring being disposed below the upper edge ring in the annular step and disposed over the annular shelf, the lower outer edge ring being defined from an electrically insulating material.Type: ApplicationFiled: July 8, 2016Publication date: February 23, 2017Inventors: William Frederick Bosch, Rajesh Dorai, Tamarak Pandhumsoporn, Brett C. Richardson, James C. Vetter, Patrick Chung
-
Publication number: 20130050892Abstract: Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.Type: ApplicationFiled: October 29, 2012Publication date: February 28, 2013Inventors: Andras Kuthi, Stephen Hwang, James C. Vetter, Greg Eilenstine, Rongping Wang, Tuan Ngo
-
Patent number: 8303763Abstract: Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.Type: GrantFiled: April 25, 2012Date of Patent: November 6, 2012Assignee: Lam Research CorporationInventors: Andras Kuthi, Stephen Hwang, James C. Vetter, Greg Eilenstine, Rongping Wang, Tuan Ngo
-
Publication number: 20120206127Abstract: Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.Type: ApplicationFiled: April 25, 2012Publication date: August 16, 2012Inventors: Andras Kuthi, Stephen Hwang, James C. Vetter, Greg Eilenstine, Rongping Wang, Tuan Ngo
-
Patent number: 8192576Abstract: Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit.Type: GrantFiled: May 23, 2007Date of Patent: June 5, 2012Assignee: Lam Research CorporationInventors: Andras Kuthi, Stephen Hwang, James C. Vetter, Greg Eilenstine, Rongping Wang, Tuan Ngo
-
Publication number: 20100315064Abstract: Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit.Type: ApplicationFiled: May 23, 2007Publication date: December 16, 2010Inventors: Andras Kuthi, Stephen Hwang, James C. Vetter, Greg Eilenstine, Rongping Wang, Tuan Ngo
-
Patent number: 6946303Abstract: The present invention is a system for creating a signature of a substrate manufactured in a semiconductor or data storage fabrication facility. A central processing unit is configured to receive external sensor data from a plurality of equipment-types located within the facility and integrate the external sensor data, by combining the data into a unitary whole, to create the signature for the substrate. Additionally, the present invention is a method for creating a signature of the substrate by selecting a substrate from the facility process line, receiving external sensor data associated with the substrate from a plurality of equipment-types, and integrating the external sensor data associated with the substrate to create the signature of the substrate. The created substrate signature may also be compared with other substrate signatures to electronically diagnose a process, equipment associated with the process, or a processed substrate.Type: GrantFiled: December 4, 2002Date of Patent: September 20, 2005Assignee: Lam Research CorporationInventors: Janet M. Flanner, James C. Vetter
-
Patent number: 6890774Abstract: The present invention is a system for creating a signature of a substrate manufactured in a semiconductor or data storage fabrication facility. A central processing unit is configured to receive external sensor data from a plurality of equipment-types located within the facility and integrate the external sensor data, by combining the data into a unitary whole, to create the signature for the substrate. Additionally, the present invention is a method for creating a signature of the substrate by selecting a substrate from the facility process line, receiving external sensor data associated with the substrate from a plurality of equipment-types, and integrating the external sensor data associated with the substrate to create the signature of the substrate. The created substrate signature may also be compared with other substrate signatures to electronically diagnose a process, equipment associated with the process, or a processed substrate.Type: GrantFiled: December 4, 2002Date of Patent: May 10, 2005Assignee: Lam Research CorporationInventors: Janet M. Flanner, James C. Vetter
-
Publication number: 20040110312Abstract: The present invention is a system for creating a signature of a substrate manufactured in a semiconductor or data storage fabrication facility. A central processing unit is configured to receive external sensor data from a plurality of equipment-types located within the facility and integrate the external sensor data, by combining the data into a unitary whole, to create the signature for the substrate. Additionally, the present invention is a method for creating a signature of the substrate by selecting a substrate from the facility process line, receiving external sensor data associated with the substrate from a plurality of equipment-types, and integrating the external sensor data associated with the substrate to create the signature of the substrate. The created substrate signature may also be compared with other substrate signatures to electronically diagnose a process, equipment associated with the process, or a processed substrate.Type: ApplicationFiled: December 4, 2002Publication date: June 10, 2004Inventors: Janet M. Flanner, James C. Vetter
-
Publication number: 20040110311Abstract: The present invention is a system for creating a signature of a substrate manufactured in a semiconductor or data storage fabrication facility. A central processing unit is configured to receive external sensor data from a plurality of equipment-types located within the facility and integrate the external sensor data, by combining the data into a unitary whole, to create the signature for the substrate. Additionally, the present invention is a method for creating a signature of the substrate by selecting a substrate from the facility process line, receiving external sensor data associated with the substrate from a plurality of equipment-types, and integrating the external sensor data associated with the substrate to create the signature of the substrate. The created substrate signature may also be compared with other substrate signatures to electronically diagnose a process, equipment associated with the process, or a processed substrate.Type: ApplicationFiled: December 4, 2002Publication date: June 10, 2004Inventors: Janet M. Flanner, James C. Vetter