Abstract: The disclosure relates to USP30 Inhibitor Compounds, pharmaceutically acceptable salts thereof, pharmaceutical compositions comprising same, and medical uses involving same.

Abstract: A reference output device includes a low side selector configured to select a first voltage level as an output signal. The output signal is a reference voltage. The reference output device also includes a high side selector configured to select a second voltage level as the output signal. The reference output device also includes a slew rate control configured to switch the output signal between the first voltage level and the second voltage level at a constant slew rate.

Abstract: Various aspects of the present disclosure include a controlled current path having a load that draws current from the controlled current path. In response to a modulating voltage signal, current is controlled through the load which causes a transistor circuit, including a transistor, to switch between two current modes. Switching will subject the transistor to voltage stresses due to current in the controlled current path spiking towards a breakdown threshold of the transistor. In response to a first aspect of the modulating voltage signal and in one of the current modes, the current in the controlled current path is directed through the first current branch. In response to a second aspect of the modulating voltage signal and in the other current mode, the current in the controlled current path is diverted from the first current branch to a second current branch.

Abstract: Cross-talk is mitigated in a switching circuit. In accordance with one or more embodiments, an apparatus includes a multi-pin connector having signal-carrying electrodes that communicate with a device external to the apparatus, and respective field-effect switches that couple the signal-carrying electrodes to respective communication channels in the apparatus. The switches include a first field-effect semiconductor switch having a gate electrode adjacent a channel region that connects electrodes (e.g., source and drain regions) when a threshold switching voltage is applied to the gate, in which the electrodes are connected between one of the signal-carrying electrodes and a first channel coupled to an electrostatic discharge (ESD) circuit. A bias circuit mitigates cross-talk between the communication channels by biasing the channel region of the first field-effect semiconductor switch (in an off state) to boost the threshold switching voltage over a threshold discharge voltage of the ESD circuit.

Abstract: A reference output device includes a low side selector configured to select a first voltage level as an output signal. The output signal is a reference voltage. The reference output device also includes a high side selector configured to select a second voltage level as the output signal. The reference output device also includes a slew rate control configured to switch the output signal between the first voltage level and the second voltage level at a constant slew rate.

Abstract: Various aspects of the present disclosure include a controlled current path having a load that draws current from the controlled current path. In response to a modulating voltage signal, current is controlled through the load which causes a transistor circuit, including a transistor, to switch between two current modes. Switching will subject the transistor to voltage stresses due to current in the controlled current path spiking towards a breakdown threshold of the transistor. In response to a first aspect of the modulating voltage signal and in one of the current modes, the current in the controlled current path is directed through the first current branch. In response to a second aspect of the modulating voltage signal and in the other current mode, the current in the controlled current path is diverted from the first current branch to a second current branch.

Abstract: Cross-talk is mitigated in a switching circuit. In accordance with one or more embodiments, an apparatus includes a multi-pin connector having signal-carrying electrodes that communicate with a device external to the apparatus, and respective field-effect switches that couple the signal-carrying electrodes to respective communication channels in the apparatus. The switches include a first field-effect semiconductor switch having a gate electrode adjacent a channel region that connects electrodes (e.g., source and drain regions) when a threshold switching voltage is applied to the gate, in which the electrodes are connected between one of the signal-carrying electrodes and a first channel coupled to an electrostatic discharge (ESD) circuit. A bias circuit mitigates cross-talk between the communication channels by biasing the channel region of the first field-effect semiconductor switch (in an off state) to boost the threshold switching voltage over a threshold discharge voltage of the ESD circuit.