Patents by Inventor James CC Huang

James CC Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process of forming self-aligned silicide on source/drain region
    Patent number: 6238989
    Abstract: A process of forming a silicide on a source/drain region of a MOS device is described, wherein the MOS device has a gate spacer partially covering the source/drain region. A silicon film is formed on the source/drain region, wherein the silicon film has a portion near the gate spacer substantially thinner than the other portion of the silicon film. The silicon film is reacted with a metal film to wholly consume the portion of the silicon film near the gate spacer and to partially consume the other portion of the silicon film.
    Type: Grant
    Filed: March 10, 2000
    Date of Patent: May 29, 2001
    Assignee: United Microelectronics Corp.
    Inventors: Michael Wc Huang, Gwo-Shii Yang, James CC Huang, Wen-Yi Hsieh