Patents by Inventor James Cheng-Min Hwang

James Cheng-Min Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Adaptive bias technique for field effect transistor
    Patent number: 7986186
    Abstract: A power amplifier includes a LDMOS transistor having a source, a drain, a control gate and a shielding electrode positioned between the control gate and the drain, and means for adaptively biasing the drain and shielding electrode power information for a RF signal.
    Type: Grant
    Filed: December 13, 2007
    Date of Patent: July 26, 2011
    Assignee: Lehigh University
    Inventors: Marvin Nii Nartey Marbell, James Cheng-Min Hwang
  • ADAPTIVE BIAS TECHNIQUE FOR FIELD EFFECT TRANSISTOR
    Publication number: 20100085120
    Abstract: A power amplifier includes a LDMOS transistor having a source, a drain, a control gate and a shielding electrode positioned between the control gate and the drain, and means for adaptively biasing the drain and shielding electrode power information for a RF signal.
    Type: Application
    Filed: December 13, 2007
    Publication date: April 8, 2010
    Applicant: LEHIGH UNIVERSITY
    Inventors: Marvin Nii Nartey Marbell, James Cheng-Min Hwang