Abstract: The present invention provides a method for manufacturing a semiconductor device, comprising: determining an isolation structure stress effect of a first semiconductor device, determining an optical proximity effect of a second semiconductor device, selecting a modeling design parameter such that the isolation structure stress effect is offset against the optical proximity effect on a fabrication model, and using the selected design parameter to construct a third semiconductor device.

Abstract: A method and apparatus for detecting the phase difference between an input data signal and a local clock signal is provided. An input data signal is frequency divided and then fed through a series connection of a pair of data latches. Signals provided at the input and outputs of the pair of the data latches are exclusively-ORed to provide a variable width pulse signal and a reference pulse signal that may be used in a phase-locked loop to align the local clock with the input data signal in a predetermined phase relationship. A re-timed data signal is provided by inputting the input data signal to a data latch clocked with an inverted phase-aligned clock signal.

Abstract: An integrated circuit includes a conductive fusible link (14) that may be blown by laser energy. The dielectric material (15) covering the fuse is etched away to expose the fuse. A protective dielectric layer (30) is formed on the fuse to a controlled thickness less than that of the interlevel dielectric. The resulting structure prevents shorts between conductors that might otherwise occur due to debris from the fuse-blowing operation, and provides protection to the integrated circuit. In addition, the fuse blowing operation is more consistent from fuse to fuse.

Abstract: A single beam of radiation is split and part of the beam is directed to conductive links, e.g. runners on a substrate. Analysis of the incident beam and the beam reflected from the substrate permits a determination of when the link is blown and rendered non-conductive and when significant substrate involvement occurs.