Abstract: Apparatus for treating products with plasma generated from a source gas. The apparatus includes a vacuum chamber, a plurality of juxtaposed electrodes arranged in adjacent pairs inside the vacuum chamber, and a plasma excitation source electrically coupled with the electrodes. The apparatus may include conductive members extending into the interior of each electrode to establish a respective electrical connection with the plasma excitation source. The apparatus may include a gas distribution manifold and multiple gas delivery tubes coupled with the gas distribution manifold. Each gas delivery tube has an injection port configured to inject the source gas between each adjacent pair of electrodes. The apparatus may further include flow restricting members that operate to partially obstruct a peripheral gap between each adjacent pair of electrodes, which restricts the escape of the source gas from the process chamber between each adjacent pair of electrodes.

Abstract: Apparatus and methods for simultaneously supporting multiple workpieces inside a processing space of a plasma processing system for simultaneous two-sided plasma processing. The apparatus may be a fixture having a carrier plate configured to be supported inside the processing space and a plurality of first openings extending through the thickness of the carrier plate. The carrier plate is configured to contact each of the workpieces over an annular region at an outer peripheral edge so that the first and second sides of each of the workpieces is exposed to the plasma through a respective one of said plurality of first openings.

Abstract: Apparatus and methods for plasma processing workpieces of different diameters. The apparatus includes a lift plate having an outer perimeter, an opening inside of the outer perimeter, and a gap extending between the opening and the outer perimeter. The lift plate includes annular rims of different inner diameters and that are configured to respectively support the first and second workpieces.

Abstract: Apparatus and methods for plasma processing workpieces of different diameters. The apparatus includes a lift plate having an outer perimeter, an opening inside of the outer perimeter, and a gap extending between the opening and the outer perimeter. The lift plate includes annular rims of different inner diameters and that are configured to respectively support the first and second workpieces.

Abstract: A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.

Abstract: A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.

Abstract: In an embodiment of the present invention, a method is provided for fabricating an electronics assembly having a substrate and a plurality of circuit elements. The method includes forming a liquid barrier on the substrate, placing a first circuit element on one side of the liquid barrier, and placing a second circuit element on the opposite side of the liquid barrier. A liquid is applied to the first circuit element. The method further includes using the liquid barrier to prevent the liquid applied to the first circuit element from contaminating the second circuit element so that the spacing between the first and second circuit elements can be minimized.

Abstract: A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.

Abstract: In an embodiment of the present invention, a method is provided for fabricating an electronics assembly having a substrate and a plurality of circuit elements. The method includes forming a liquid barrier on the substrate, placing a first circuit element on one side of the liquid barrier, and placing a second circuit element on the opposite side of the liquid barrier. A liquid is applied to the first circuit element.

Abstract: Apparatus for treating products with plasma generated from a source gas. The apparatus includes a vacuum chamber, a plurality of juxtaposed electrodes arranged in adjacent pairs inside the vacuum chamber, and a plasma excitation source electrically coupled with the electrodes. The apparatus may include conductive members extending into the interior of each electrode to establish a respective electrical connection with the plasma excitation source. The apparatus may include a gas distribution manifold and multiple gas delivery tubes coupled with the gas distribution manifold. Each gas delivery tube has an injection port configured to inject the source gas between each adjacent pair of electrodes. The apparatus may further include flow restricting members that operate to partially obstruct a peripheral gap between each adjacent pair of electrodes, which restricts the escape of the source gas from the process chamber between each adjacent pair of electrodes.

Abstract: Plasma treatment systems and methods for distributing RF energy to electrodes in a plasma treatment system. The plasma treatment system includes power and ground busses, positive and negative phase primary electrode busses, and positive and negative phase secondary electrode busses. The power and ground busses are coupled to the secondary electrode busses by isolation transformers so that the negative phase secondary electrode buss is provided with an RF signal that is 180 degrees out of phase with the RF signal supplied to the positive phase secondary electrode buss. The secondary electrode busses are coupled to respective positive and negative phase primary electrode busses by capacitors. The primary electrode busses are each coupled to electrodes in the vacuum chamber. Load coils coupling the primary electrode busses to an RF ground may cooperative with the capacitors to adjust the input impedance at the power buss.

Abstract: Apparatus and methods for shielding a feature projecting from a first area on a substrate to a plasma while simultaneously removing extraneous material from a different area on the substrate with the plasma. The apparatus includes at least one concavity positioned and dimensioned to receive the feature such that the feature is shielded from the plasma. The apparatus further includes a window through which the plasma removes the extraneous material. The method generally includes removing the extraneous material while shielding the feature against plasma exposure.

Abstract: Plasma treatment systems and methods for distributing RF energy to electrodes in a plasma treatment system. The plasma treatment system includes power and ground busses, positive and negative phase primary electrode busses, and positive and negative phase secondary electrode busses. The power and ground busses are coupled to the secondary electrode busses by isolation transformers so that the negative phase secondary electrode buss is provided with an RF signal that is 180 degrees out of phase with the RF signal supplied to the positive phase secondary electrode buss. The secondary electrode busses are coupled to respective positive and negative phase primary electrode busses by capacitors. The primary electrode busses are each coupled to electrodes in the vacuum chamber. Load coils coupling the primary electrode busses to an RF ground may cooperative with the capacitors to adjust the input impedance at the power buss.

Abstract: Magnetic clips for use with a substrate holder for holding a substrate in a processing chamber of a plasma treatment system. The clip includes first and second body members each having a clamping surface and a magnet. The first body member is configured to be mechanically connected with the substrate holder. The second body member is pivotally connected by a hinge with the first body member for movement relative to the first body member between closed and opened positions. In the closed position, an edge region of the substrate is positioned between the clamping surfaces. In the opened position, the edge region is released. The magnet on the second body member magnetically attracts the magnet on the first body member, when the second body member is in the closed position, to apply a force that restrains movement of the edge region of the substrate relative to the clamping surfaces.

Abstract: A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.

Abstract: Apparatus and methods for simultaneously supporting multiple workpieces inside a processing space of a plasma processing system for simultaneous two-sided plasma processing. The apparatus may be a fixture having a carrier plate configured to be supported inside the processing space and a plurality of first openings extending through the thickness of the carrier plate. The carrier plate is configured to contact each of the workpieces over an annular region at an outer peripheral edge so that the first and second sides of each of the workpieces is exposed to the plasma through a respective one of said plurality of first openings.

Abstract: An apparatus for processing a substrate with a plasma. The apparatus includes first and second electrodes positioned with a spaced apart relationship. A separating ring has a vacuum-tight engagement with confronting surfaces of the first electrode and the second electrode to define an evacuatable processing region therebetween. Communicating with the processing region is a process gas port for introducing a process gas to the processing region. The processing region may be evacuated through a vacuum port defined in one of the first and second electrodes to a pressure suitable for exciting a plasma from the process gas in the processing region when the first and second electrodes are powered.

Abstract: A method for removing thin layers of a two-component molding material from areas on a substrate. The method includes using a plasma formed using a first gas mixture for removing one component of the molding material and a plasma formed using a different second gas mixture for removing the other component of the molding material. For filled epoxies commonly used as molding materials, the first gas mixture may be an oxygen-rich mixture of an oxygen-containing gas species and a fluorine-containing gas species, and the second gas mixture may be a fluorine-rich mixture of the same gases.

Abstract: An apparatus is provided for treating pollutants in a gaseous stream. The apparatus comprises tubular inlets for mixing a gas stream with other oxidative and inert gases for mixture and flame production within a reaction chamber. The reaction chamber is heated by heating elements and has an interior wall with orifices through which heated air enters into the central reaction chamber. The oxidized gases are treated also for particles removal by flowing through a packed bed. The packed bed is cooled and its upper portion with air inlets to enhance condensation and particle growth in the bed. The treated gas stream is also scrubbed in a continuous regenerative scrubber comprising at least two vertically separated beds in which one bed can be regenerated while the other is operative so that the flow may be continuously passed through the bed.

Abstract: Magnetic clips for use with a substrate holder for holding a substrate in a processing chamber of a plasma treatment system. The clip includes first and second body members each having a clamping surface and a magnet. The first body member is configured to be mechanically connected with the substrate holder. The second body member is pivotally connected by a hinge with the first body member for movement relative to the first body member between closed and opened positions. In the closed position, an edge region of the substrate is positioned between the clamping surfaces. In the opened position, the edge region is released. The magnet on the second body member magnetically attracts the magnet on the first body member, when the second body member is in the closed position, to apply a force that restrains movement of the edge region of the substrate relative to the clamping surfaces.