Abstract: A method of manufacturing a semiconductor component includes providing a composite substrate (300) with a dielectric portion and a semiconductor portion and growing an epitaxial layer (400) over the composite substrate. The epitaxial layer has a polycrystalline portion (402) over the dielectric portion of the composite substrate and also has a monocrystalline portion (401) over the semiconductor portion of the composite substrate. A first dopant is diffused into the monocrystalline portion of the epitaxial layer to form an emitter region in the monocrystalline portion of the epitaxial layer while a second dopant is simultaneously diffused into the monocrystalline portion of the epitaxial layer to form an enhanced portion of the base region.

Abstract: A method for forming high quality oxides wherein semiconductor material is placed in an oxidizing environment and subjected to a predetermined concentration of oxygen. This oxygen concentration is increased over time until a predetermined amount of oxide has been formed. Once the predetermined amount of oxide has been formed, the semiconductor material/oxide interface is subjected to a burst of steam that passivates the interface thereby reducing the number of unreacted semiconductor material atoms.