Patents by Inventor James D. Weil

James D. Weil has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Backside protection films
    Patent number: 6670283
    Abstract: Disclosed is a method of fabricating a semiconductor device, comprising: (a) providing a bare semiconductor substrate, the substrate having a frontside and a backside; (b) forming one or more protective films on the backside of the substrate; and (c) performing one or more wafer fabrication steps. Some or all the protective films may be removed and the method repeated multiple times during fabrication of the semiconductor device.
    Type: Grant
    Filed: November 20, 2001
    Date of Patent: December 30, 2003
    Assignee: International Business Machines Corporation
    Inventors: Faye D. Baker, Casey J. Grant, Mousa H. Ishaq, Joel M. Sharrow, James D. Weil
  • Backside protection films
    Publication number: 20030096507
    Abstract: Disclosed is a method of fabricating a semiconductor device, comprising: (a) providing a bare semiconductor substrate, the substrate having a frontside and a backside; (b) forming one or more protective films on the backside of the substrate; and (c) performing one or more wafer fabrication steps. Some or all the protective films may be removed and the method repeated multiple times during fabrication of the semiconductor device.
    Type: Application
    Filed: November 20, 2001
    Publication date: May 22, 2003
    Inventors: Faye D. Baker, Casey J. Grant, Mousa H. Ishaq, Joel M. Sharrow, James D. Weil
  • Method for limiting divot formation in post shallow trench isolation processes
    Patent number: 6541351
    Abstract: A method for limiting divot formation in shallow trench isolation structures. The method includes: providing a trench formed in a silicon region with a deposited oxide; oxidizing a top layer of the silicon region to form a layer of thermal oxide on top of the silicon region; and selectively etching the thermal oxide with respect to the deposited oxide.
    Type: Grant
    Filed: November 20, 2001
    Date of Patent: April 1, 2003
    Assignee: International Business Machines Corporation
    Inventors: Peter H. Bartlau, Marc W. Cantell, Jerome B. Lasky, James D. Weil