Abstract: The present invention relates to microstructures fabricated from semiconductor material and having a flexible member which is excited into various modes of resonance and in which such resonance is read optically. By coupling the microstructure to a surface or material of interest, a drive means will excite the flexible member into a characteristic resonance which when read optically gives indication of certain physical phenomena influencing the surface or material of interest. The microstructures of the present invention may be configured to self-resonate, as a so-called active device, under certain conditions. Many different physical phenomena may be quantified using the device of the present invention.

Abstract: A microstructure device having a array of deep lamellar structures resembling parallel plates has sharp high pass cut-off behavior associated with incident TE polarized radiation. When two such microstructures are disposed in an orthogonal orientation, they act like a 2-D array of rectangular waveguides with the cut-off behavior determined by the separation of the respective parallel plates. Another embodiment of the present invention employs a linear drive to articulate the array of coupled parallel plates to tune the filter to the operative incident radiation relatively independent of the angle of incidence. The microstructure finds application placed proximate the focal plane of an array of radiation sensitive material so that very high resolution multispectral images may be generated.

Abstract: A resonant strain gauge includes a silicon substrate, a polysilicon flexure beam attached at both ends to the substrate, and a polysilicon rigid cover cooperating with the substrate to enclose the flexure beam within a sealed vacuum chamber. An upper bias electrode is formed on the cover, and a lower bias electrode is formed on the substrate directly beneath and spaced apart from the flexure beam. A drive electrode is formed in or on the beam, centered between the upper and lower bias electrodes transversely with respect to the direction of beam elongation. The upper and lower electrodes are biased at constant voltage levels, of equal magnitude and opposite polarity. The drive electrode, ordinarily biased at ground, is selectively charged by applying an oscillating drive voltage, to cause mechanical oscillation of the beam. A piezoresistor element, formed on the beam, senses beam oscillation and provides a position indicating input to the oscillator circuit that drives the beam.