Abstract: A process is described for removing, from an integrated circuit structure, photoresist remaining after one or more metal etch steps which also removes or inactivates a sufficient amount of remaining chlorine-containing residues from the previous metal etch steps to inhibit corrosion of remaining metal for at least 24 hours. The process includes a first stripping step which comprises flowing NH.sub.3 gas through a microwave plasma generator into a stripping chamber which contains the integrated circuit structure while maintaining a plasma in the plasma generator. O.sub.2 gas (and optionally NH.sub.3 gas) is flowed through the plasma generator into the stripping chamber during a second step while maintaining the plasma in the plasma generator.