Abstract: A method of manufacturing a backed cross-ply prepreg comprises cutting, using a cutting machine, a first continuous length of a unidirectional prepreg into first prepreg segments, each having an opposing pair of segment cut edges that are non-parallel to a lengthwise direction of the unidirectional prepreg. The method also includes picking up, using a pick-and-place system, the first prepreg segments off of the cutting machine, and placing the first prepreg segments in end-to-end relation onto a conveyor belt of an adhesion machine, and in an orientation such that the segment cut edges are generally parallel to a lengthwise direction of the conveyor belt. The method also includes feeding, using the conveyor belt, the first prepreg segments to an adhesion station of the adhesion machine, and adhering, using the adhesion station, the first prepreg segments to a continuous length of a backing material.

Abstract: A manufacturing system includes a cutting machine, an adhesion machine, and a pick-and-place system. The cutting machine sequentially cuts a continuous length of a unidirectional prepreg into prepreg segments. Each prepreg segment has an opposing pair of segment cut edges that are non-parallel to a lengthwise direction of the unidirectional prepreg. The adhesion machine has a conveyor belt and an adhesion station. The pick-and-place system sequentially picks up the prepreg segments from the cutting machine, and places the prepreg segments in end-to-end relation on the conveyor belt, and in an orientation such that the segment cut edges are generally parallel to a lengthwise direction of the conveyor belt. The conveyor belt feeds the prepreg segments to the adhesion station. The adhesion station adheres the prepreg segments to a continuous length of a backing material, thereby resulting in a continuous length of a backed cross-ply prepreg.

Abstract: A process for by oxidizing a quinacridone in a liquid medium with a non-metal oxidant producing a quinacridonequinone.

Abstract: A GaN based three layer buffer structure disposed on a substrate, and having a GaN layer disposed on the three layer buffer structure, the GaN layer serving as a platform for growth of a light emitting structure thereon.

Abstract: A GaN based three layer buffer on a sapphire substrate provides a template for growth of a high quality I GaN layer as a substitute substrate for growth of a Nitride based LED.

Abstract: A GaN based three layer buffer on a sapphire substrate provides a template for growth of a high quality I GaN layer as a substitute substrate for growth of a Nitride based LED.