Abstract: An apparatus includes a first lateral diffusion field effect transistor (LDFET) having a first threshold voltage and that includes a first gate electrode, a first drain contact, a first source contact, and a first electrically conductive shield plate separated from the first gate electrode and the first source contact by a first interlayer dielectric. A second LDFET of the apparatus has a second threshold voltage and includes a second gate electrode, a second drain contact, and a second source contact. The second source contact is electrically connected to the first source contact of the first LDFET. A control circuit of the apparatus is electrically coupled to the first electrically conductive shield plate and is configured to apply to the first electrically conductive shield plate a first gate bias voltage of a first level to set the first threshold voltage of the first LDFET to a first desired threshold voltage.

Abstract: An apparatus includes a first lateral diffusion field effect transistor (LDFET) having a first threshold voltage and that includes a first gate electrode, a first drain contact, a first source contact, and a first electrically conductive shield plate separated from the first gate electrode and the first source contact by a first interlayer dielectric. A second LDFET of the apparatus has a second threshold voltage and includes a second gate electrode, a second drain contact, and a second source contact. The second source contact is electrically connected to the first source contact of the first LDFET. A control circuit of the apparatus is electrically coupled to the first electrically conductive shield plate and is configured to apply to the first electrically conductive shield plate a first gate bias voltage of a first level to set the first threshold voltage of the first LDFET to a first desired threshold voltage.

Abstract: An apparatus includes a first lateral diffusion field effect transistor (LDFET) having a first threshold voltage and that includes a first gate electrode, a first drain contact, a first source contact, and a first electrically conductive shield plate separated from the first gate electrode and the first source contact by a first interlayer dielectric. A second LDFET of the apparatus has a second threshold voltage and includes a second gate electrode, a second drain contact, and a second source contact. The second source contact is electrically connected to the first source contact of the first LDFET. A control circuit of the apparatus is electrically coupled to the first electrically conductive shield plate and is configured to apply to the first electrically conductive shield plate a first gate bias voltage of a first level to set the first threshold voltage of the first LDFET to a first desired threshold voltage.

Abstract: An apparatus includes a first lateral diffusion field effect transistor (LDFET) having a first threshold voltage and that includes a first gate electrode, a first drain contact, a first source contact, and a first electrically conductive shield plate separated from the first gate electrode and the first source contact by a first interlayer dielectric. A second LDFET of the apparatus has a second threshold voltage and includes a second gate electrode, a second drain contact, and a second source contact. The second source contact is electrically connected to the first source contact of the first LDFET. A control circuit of the apparatus is electrically coupled to the first electrically conductive shield plate and is configured to apply to the first electrically conductive shield plate a first gate bias voltage of a first level to set the first threshold voltage of the first LDFET to a first desired threshold voltage.

Abstract: An apparatus includes a first lateral diffusion field effect transistor (LDFET) having a first threshold voltage and that includes a first gate electrode, a first drain contact, a first source contact, and a first electrically conductive shield plate separated from the first gate electrode and the first source contact by a first interlayer dielectric. A second LDFET of the apparatus has a second threshold voltage and includes a second gate electrode, a second drain contact, and a second source contact. The second source contact is electrically connected to the first source contact of the first LDFET. A control circuit of the apparatus is electrically coupled to the first electrically conductive shield plate and is configured to apply to the first electrically conductive shield plate a first gate bias voltage of a first level to set the first threshold voltage of the first LDFET to a first desired threshold voltage.

Abstract: An apparatus includes a first lateral diffusion field effect transistor (LDFET) having a first threshold voltage and that includes a first gate electrode, a first drain contact, a first source contact, and a first electrically conductive shield plate separated from the first gate electrode and the first source contact by a first interlayer dielectric. A second LDFET of the apparatus has a second threshold voltage and includes a second gate electrode, a second drain contact, and a second source contact. The second source contact is electrically connected to the first source contact of the first LDFET. A control circuit of the apparatus is electrically coupled to the first electrically conductive shield plate and is configured to apply to the first electrically conductive shield plate a first gate bias voltage of a first level to set the first threshold voltage of the first LDFET to a first desired threshold voltage.

Abstract: An LDFET is disclosed. A source region is electrically coupled to a source contact. A lightly doped drain (LDD) region has a lower dopant concentration than the source region, and is separated from the source region by a channel. A highly doped drain region forms an electrically conductive path between a drain contact and the LDD region. A gate electrode is located above the channel and separated from the channel by a gate dielectric. A shield plate is located above the gate electrode and the LDD region, and is separated from the LDD region, the gate electrode, and the source contact by a dielectric layer. A control circuit applies a variable voltage to the shield plate that: (1) accumulates a top layer of the LDD region before the transistor is switched on; and (2) depletes the top layer of the LDD region before the transistor is switched off.

Abstract: An LDFET is disclosed. A source region is electrically coupled to a source contact. A lightly doped drain (LDD) region has a lower dopant concentration than the source region, and is separated from the source region by a channel. A highly doped drain region forms an electrically conductive path between a drain contact and the LDD region. A gate electrode is located above the channel and separated from the channel by a gate dielectric. A shield plate is located above the gate electrode and the LDD region, and is separated from the LDD region, the gate electrode, and the source contact by a dielectric layer. A control circuit applies a variable voltage to the shield plate that: (1) accumulates a top layer of the LDD region before the transistor is switched on; and (2) depletes the top layer of the LDD region before the transistor is switched off.

Abstract: An LDFET is disclosed. A source region is electrically coupled to a source contact. A lightly doped drain (LDD) region has a lower dopant concentration than the source region, and is separated from the source region by a channel. A highly doped drain region forms an electrically conductive path between a drain contact and the LDD region. A gate electrode is located above the channel and separated from the channel by a gate dielectric. A shield plate is located above the gate electrode and the LDD region, and is separated from the LDD region, the gate electrode, and the source contact by a dielectric layer. A control circuit applies a variable voltage to the shield plate that: (1) accumulates a top layer of the LDD region before the transistor is switched on; and (2) depletes the top layer of the LDD region before the transistor is switched off.

Abstract: An LDFET is disclosed. A source region is electrically coupled to a source contact. A lightly doped drain (LDD) region has a lower dopant concentration than the source region, and is separated from the source region by a channel. A highly doped drain region forms an electrically conductive path between a drain contact and the LDD region. A gate electrode is located above the channel and separated from the channel by a gate dielectric. A shield plate is located above the gate electrode and the LDD region, and is separated from the LDD region, the gate electrode, and the source contact by a dielectric layer. A control circuit applies a variable voltage to the shield plate that: (1) accumulates a top layer of the LDD region before the transistor is switched on; and (2) depletes the top layer of the LDD region before the transistor is switched off.