Abstract: Method and system for aligning a clock signal to parallel data are described. According to one embodiment, a clock shifting circuit shifts an incoming clock signal relative to an incoming data signal, and a data clocking circuit uses the shifted clock signal to reclock the incoming data signal. The clock shifting circuit may comprise a phase locked loop (PLL) coupled with multiple D flip flops (DFFs) connected in series. Divisional combinatorial logic may be disposed between DFFs in the series. Data clocking circuits may comprise one DFF to reclock each incoming data bit, a pair of DFFs to reclock each incoming data bit, or other circuits such as true-complement blocks to serve as local oscillators to mixers. Multiple shifted clock signals may be produced, such as those shifted 60, 90, 120, 180, 240, and 270 degrees relative to the incoming clock signal.

Abstract: Described herein are methods and apparatuses for achieving a desired duty cycle on an output of a PLL. According to one embodiment, a method is described, including generating a single ended clock signal from a differential common mode clock signal using a limiting differential amplifier, wherein the single ended clock signal has a duty cycle, generating a differential bias current signal in response to the duty cycle of the single ended clock signal, and correcting the duty cycle of the single ended clock signal to a desired duty cycle by applying the differential bias current signal to the limiting differential amplifier.

Abstract: Described herein are methods and apparatuses for achieving a desired duty cycle on an output of a PLL. According to one embodiment, a method is described, including generating a single ended clock signal from a differential common mode clock signal using a limiting differential amplifier, wherein the single ended clock signal has a duty cycle, generating a differential bias current signal in response to the duty cycle of the single ended clock signal, and correcting the duty cycle of the single ended clock signal to a desired duty cycle by applying the differential bias current signal to the limiting differential amplifier.

Abstract: An integrated circuit inductor structure that includes a shielding pattern that induces a plurality of small eddy currents to shield the magnetic energy generated by the inductor from the substrate of the IC. The IC inductor structure is formed on a Silicon on Insulator (SOI) substrate where the substrate of the SOI has high resistivity. The shielding pattern forms a checkerboard pattern that includes a plurality of conducting regions completely isolated from each other by oxide material. The inductor has a high quality factor and a high self-resonance frequency due to the effective shielding of electromagnetic energy from the substrate of the IC while not reducing the effective inductance of the inductor.

Abstract: Integrated circuit varactor structures that include either an P-gate/N-well or N-gate/P-well layer configuration formed on an SOI substrate. The varactor structure is completely electrically isolated from the substrate of the IC by an oxide layer of the SOI substrate and by oxide-filled trenches formed on both sides of the varactor structures. The isolation trenches preferably extend to the oxide layer of the SOI substrate. The P-gate/N-well varactor structure includes N+ implant regions formed in an N-well implant layer of the varactor. The N+ implant regions comprise the source and the drain of a varactor. A LOCOS layer may be formed over the N-well layer where the P-gate is formed over the LOCOS layer. The P-gate may be formed of polysilicon. The N-gate/P-well varactor structure includes P+ implant regions formed in a P-well implant layer of the varactor. The P+ implant regions comprise the source and the drain of a varactor.