Abstract: A method for manufacturing solar cells wherein a plurality of wafers of a first conductivity type are assembled and thereafter doped with an active impurity of an opposite conductivity imparting type to establish a p-n junction. Thereafter front and back contacts are formed on the wafers by metallization, the back contact material being chosen so that it penetrates any p-n junctions present in the area of the back contact, if any, and thereby forms a low resistance ohmic contact through any such junction. Thereafter the contact containing wafers are coin stacked and plasma etched so that the edge faces of the coin stacked wafers have removed therefrom sufficient p-n junction to electrically isolate the front junction from the back junction or junctions.

Abstract: A process for manufacturing solar cells. Silicon wafers are assembled in a holding jig such as a diffusion boat in pairs with adjacent surfaces of each of the pairs in contact. The thus assembled wafers are subjected to a chemical vapor deposition diffusion step during which a phosphorous pentoxide glass layer is formed predominantly on the exposed surfaces and side edges of the wafers along with a PN junction thereunder. A small amount of the phosphorous pentoxide glass is also formed on the surfaces which are in contact with each other particularly at the outer edges thereof. The wafers are then reassembled in such a manner that the surfaces having the phosphorous pentoxide layer thereon are placed in contact with each other and again the wafers are placed in a holding jig.

Abstract: A photovoltaic array composed of a light transmitting member having a plurality of sides, at least one photovoltaic means carried by at least one of said sides, and a diffusive member covering a portion of said device.

Abstract: A silicon solar cell having a body of boron doped P-type silicon material with a shallow P/N junction formed therein through diffusion of phosphorous into one surface thereof. A contact pattern of conductive material is formed on the surface of the solar cell in which the P/N junction is formed. The pattern is formed by first depositing a metallic layer upon the entire surface of the body and then applying the contact pattern by printing upon the surface of the metal. The metal has a characteristic such that when heated in the presence of oxygen to an appropriate temperature to fire the conductive material, it oxidizes and forms an anti-reflective layer on the surface of the cell except in those areas where the printed contact pattern is disposed. In the areas of the printed contact pattern the metal forms an ohmic contact between the surface of the silicon and the printed contact pattern and provides a barrier to preclude the conductive contact pattern material from punching through the shallow P/N junction.