Abstract: A method of preparing a diamond crystal substrate for epitaxial deposition thereupon of a delta doping layer includes preparing an atomically smooth, undamaged diamond crystal substrate surface, which can be in the (100) plane, by polishing the surface and then etching the surface to remove subsurface damage caused by the polishing. The polishing can include a rough polish, for example in the (010) direction, followed by a fine polish, for example in the (011) direction, that removes the polishing tracks from the rough polishing. After etching the polished face can have a roughness Sa of less than 0.3 nm. An inductively coupled reactive ion etcher can apply the etching at a homogeneous etch rate using an appropriate gas mixture such as using argon and chlorine to remove between 0.1 and 10 microns of material from the polished surface.

Abstract: A method of preparing a diamond crystal substrate for epitaxial deposition thereupon of a delta doping layer includes preparing an atomically smooth, undamaged diamond crystal substrate surface, which can be in the (100) plane, by polishing the surface and then etching the surface to remove subsurface damage caused by the polishing. The polishing can include a rough polish, for example in the (010) direction, followed by a fine polish, for example in the (011) direction, that removes the polishing tracks from the rough polishing. After etching the polished face can have a roughness Sa of less than 0.3 nm. An inductively coupled reactive ion etcher can apply the etching at a homogeneous etch rate using an appropriate gas mixture such as using argon and chlorine to remove between 0.1 and 10 microns of material from the polished surface.

Abstract: An apparatus and method for creating nanometric delta doped layers in epitaxial diamond includes providing a dummy gas load with gas impedance equivalent to the reactor, and switching gas supplied between the reactor and the gas dummy load without stopping either flow, thereby enabling rapid flow and rapid gas switching without turbulence. An atomically smooth, undamaged substrate can be prepared, preferably in the (100) plane, by etching the surface after polishing to remove subsurface damage. A gas phase chemical getter reactant such as hydrogen disulfide can be used to suppress incorporation of residual boron into the intrinsic layers. Embodiments can produce interfaces between doped and mobile layers that provide at least 100 cm2/Vsec carrier mobility and 1013 cm?2 sheet carrier concentration.

Abstract: An apparatus and method for creating nanometric delta doped layers in epitaxial diamond includes providing a dummy gas load with gas impedance equivalent to the reactor, and switching gas supplied between the reactor and the gas dummy load without stopping either flow, thereby enabling rapid flow and rapid gas switching without turbulence. An atomically smooth, undamaged substrate can be prepared, preferably in the (100) plane, by etching the surface after polishing to remove subsurface damage. A gas phase chemical getter reactant such as hydrogen disulfide can be used to suppress incorporation of residual boron into the intrinsic layers. Embodiments can produce interfaces between doped and mobile layers that provide at least 100 cm2/Vsec carrier mobility and 1013 cm?2 sheet carrier concentration.

Abstract: A device may receive incoming network traffic associated with a network device. The device may determine whether the incoming network traffic is management traffic or data traffic. The management traffic may be traffic for performing out-of-band management of the network device, and the data traffic may be traffic other than traffic for performing out-of-band management of the network device. The device may provide, to the network device, the incoming network traffic via a first connection or a second connection based on determining whether the incoming network traffic is management traffic or data traffic. The device may provide the incoming network traffic to the network device via the first connection when the incoming network traffic is management traffic, and may provide the incoming network traffic to the network device via the second connection when the incoming network traffic is data traffic.

Abstract: A device may receive incoming network traffic associated with a network device. The device may determine whether the incoming network traffic is management traffic or data traffic. The management traffic may be traffic for performing out-of-band management of the network device, and the data traffic may be traffic other than traffic for performing out-of-band management of the network device. The device may provide, to the network device, the incoming network traffic via a first connection or a second connection based on determining whether the incoming network traffic is management traffic or data traffic. The device may provide the incoming network traffic to the network device via the first connection when the incoming network traffic is management traffic, and may provide the incoming network traffic to the network device via the second connection when the incoming network traffic is data traffic.

Abstract: A heterojunction between thin films of NCD and 4H—SiC was developed. Undoped and B-doped NCDs were deposited on both n? and p? SiC epilayers. I-V measurements on p+ NCD/n? SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30° C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.

Abstract: A method of making a Schottky diode comprising the steps of: providing a single crystal diamond comprising a surface; placing the single crystal diamond in a CVD system; heating the diamond to a temperature of at least about 950° C.; providing a gas mixture capable of growing diamond film and comprising a sulfur compound through the CVD system; growing an epitaxial diamond film on the surface of the single crystal diamond; baking the diamond at a temperature of at least about 650° C. in air for a period of time that minimizes oxidation of the diamond; and fabricating a Schottky diode comprising the diamond film. A Schottky diode comprising an epitaxial diamond film and capable of blocking at least about 6 kV in a distance of no more than about 300 &mgr;m.

Abstract: A spectroelectrochemical cell (10 or 30) with a transparent conductive diamond electrode (15 or 35), which is free standing or deposited on quartz is described. The conductive electrode allows oxidation or reduction reactions to be initiated in the cell electrochemically by the electrode so as to observe the reaction over time spectroscopically.

Abstract: A method of making a Schottky diode comprising the steps of: providing a single crystal diamond comprising a surface; placing the single crystal diamond in a CVD system; heating the diamond to a temperature of at least about 950° C.; providing a gas mixture capable of growing diamond film and comprising a sulfur compound through the CVD system; growing an epitaxial diamond film on the surface of the single crystal diamond; baking the diamond at a temperature of at least about 650° C. in air for a period of time that minimizes oxidation of the diamond; and fabricating a Schottky diode comprising the diamond film. A Schottky diode comprising an epitaxial diamond film and capable of blocking at least about 6 kV in a distance of no more than about 300 &mgr;m.

Abstract: A sealed, metal oxide, electrodeless discharge lamp having a high emission ntensity in the visible 400-700 nm range. Within the sealed container assembly of the lamp there is a source of metal atoms capable of forming a volatile oxide and a source of an oxygen containing gas. The lamp produces a plasma and volatilizes the metal into the plasma. Preferably the lamp is at a low pressure of about 20-40 torr and the metals are molybdenum or tungsten. Power is applied by inductively coupled electromagnetic radiation. A regenerative agent such as a halogen is added for recycling any deposited metal into the gas phase and to form a volatile compound with the source of metal atoms. The agent lowers the temperatures needed to volatilize the metal into the plasma. The lamp is operated by first providing energy at a low level to initiate the plasma and then supplying the metal atoms into the plasma.

Abstract: A method for the chemical vapor deposition of diamond includes the steps of:(a) applying a thermally conductive paint between a substrate seed crystal and an end surface of a vacuum line [having an inner surface and an outer surface], the vacuum line protruding through a mount;(b) holding within a chemical vapor deposition flame the substrate seed crystal upon the mount by applying a vacuum to the substrate seed crystal via the vacuum line protruding through the mount, wherein a portion of an outer surface of the vacuum line in contact with the mount is coated with a thermally conductive lubricant;(c) flowing a heat exchanging fluid through the mount to maintain the surface of the substrate seed crystal at a temperature suitable for chemical vapor deposition of diamond; and(d) directing a deposition species for chemical vapor deposition to deposit diamond onto a surface of the substrate seed crystal.

Abstract: A three-way power source circuit for portable electronic equipment, such as a radio, is disclosed. The power source circuit comprises a solar energy cell, a rechargeable battery and a standard nonrechargeable dry cell. A transistor couples the solar cell and rechargeable battery to a common point of the circuit, and a second transistor couples a standard dry cell to the common point. The common point provides one of the power output lines to the portable electronic equipment. The solar cell, rechargeable battery and standard dry cell return lines are coupled to a further common point which serves as the return line for power supplied to the portable electronic equipment. Switches are provided for eliminating the flow of current to the portable electronic equipment. The three-way power source circuit allows the solar cell to recharge the rechargeable cell when sufficient light is present.