Abstract: An MNOS nonvolatile semiconductive memory device of the type which has a thick gate insulating layer overlapping the source and drain regions and a thin gate insulator layer in the memory portion of the device includes a region of relatively high concentration of impurities of the same type conductivity as the substrate in the portion of the channel which is beneath the thin gate insulating layer. This increases the values of both the low threshold and the high threshold states of the memory portion of the device so as to increase the threshold voltage window of the device.

Abstract: A comb filter comprising a charge transfer device (CTD) structure for separating frequency interleaved luminance and chrominance components of a composite color television signal directly within the CTD structure. The CTD structure has first and second pairs of input sections of substantially identical geometry, one input section of the second pair being preceded by a signal inverter. Signal charge as applied to the first and second input pairs are delayed such that signal charge from the first input pair exhibits a 1H delay relative to signal charge from the second input pair, when the signal charge from the respective input pairs are combined with each other.

Abstract: An arrangement of charge transfer devices comprising a main signal transfer path defined by first and second sets of charge transfer electrodes, and an auxiliary path independent of the main path including a predetermined number of electrodes. Capacitances are respectively associated with the electrodes forming the first and second sets of electrodes of the main path, and with the electrodes of the auxiliary path. The electrodes of the auxiliary path are connected to the one of the sets of electrodes of the main channel to establish a desired relationship (e.g., balance) between the capacitances of the first and second sets of electrodes.

Abstract: In a two-phase, charge-coupled device having alternate rows of internal and verlapping external electrodes, the external electrodes are fabricated from polysilicon instead of aluminum as heretofore, the internal electrodes also being of polysilicon. Sets of corresponding electrodes are then connected to a bus bar at each end, each bus bar for the same set of corresponding electrodes carrying the same phase, or clocking, signal.