Patents by Inventor James E. Ellenson
James E. Ellenson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220177296Abstract: Examples of an epitaxial-silicon wafer with a buried oxide layer are described herein. Examples of methods to manufacture an epitaxial-silicon wafer with a buried oxide layer are also described herein. In some examples, material may be removed from an epitaxial-silicon wafer at a surface opposite an epitaxial surface layer until the epitaxial-silicon wafer is a specified thickness. The thinned epitaxial-silicon wafer may be bonded to an oxidized-silicon wafer at an oxidized surface forming a buried oxide layer.Type: ApplicationFiled: August 23, 2019Publication date: June 9, 2022Applicant: Hewlett-Packard Development Company, L.P.Inventors: Stanley J. Wang, James E. Ellenson
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Patent number: 9090461Abstract: A temporary optical wave diffusion-promoting film is adhered to a lidded microelectromechanical systems (MEMS) wafer. Testing is performed on the lidded MEMS wafer using an interferometer directed towards the temporary optical wave diffusion-promoting film applied to the lidded MEMS wafer. The temporary optical wave diffusion-promoting film is peeled from the lidded MEMS wafer to remove the temporary optical wave diffusion-promoting film from the lidded MEMS wafer after performing the testing.Type: GrantFiled: April 30, 2013Date of Patent: July 28, 2015Assignee: Hewlett-Packard Development Company, L.P.Inventors: Danijel Gostovic, James E. Ellenson, Tracy B. Forrest
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Publication number: 20140320847Abstract: A temporary optical wave diffusion-promoting film is adhered to a lidded microelectromechanical systems (MEMS) wafer. Testing is performed on the lidded MEMS wafer using an interferometer directed towards the temporary optical wave diffusion-promoting film applied to the lidded MEMS wafer. The temporary optical wave diffusion-promoting film is peeled from the lidded MEMS wafer to remove the temporary optical wave diffusion-promoting film from the lidded MEMS wafer after performing the testing.Type: ApplicationFiled: April 30, 2013Publication date: October 30, 2014Applicant: Hewlett-Packard Development Company, L.P.Inventors: Danijel Gostovic, James E. Ellenson, Tracy B. Forrest
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Patent number: 7372714Abstract: A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise a tunnel-junction device. Methods for fusing a tunnel-junction device of a memory storage element without fusing a tunnel-junction device of an associated control element are disclosed. The memory storage element may have an effective cross-sectional area that is greater than an effective cross-sectional area of the control element. A reference element comprising a tunnel-junction device may be used with a current source to fuse a memory storage element without fusing a tunnel-junction device of an associated control element. Methods of making the memory structure and using it in electronic devices are disclosed.Type: GrantFiled: July 26, 2006Date of Patent: May 13, 2008Inventors: Peter Fricke, Andrew L. Van Brocklin, James E. Ellenson
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Patent number: 7294899Abstract: A method of manufacturing a nanowire filament includes forming and fusing actions. In a forming action, close proximity conductors are formed. In another forming action, a junction oxide is formed between the close proximity conductors. In a fusing action, a nanowire filament is fused between the close proximity conductors, through the junction oxide. A circuit is also provided, having first and second close proximity conductors, and a nanowire filament fused between the close proximity conductors.Type: GrantFiled: June 1, 2005Date of Patent: November 13, 2007Assignee: Hewlett-Packard Development Company, L.P.Inventors: Neal W. Meyer, James E. Ellenson
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Patent number: 7277619Abstract: This invention relates to a method for forming a nano-imprinted photonic crystal waveguide, comprising the steps of: preparing an optical film on a substrate; preparing a template having a plurality of protrusions of less than 500 nm in length such that the protrusions are spaced a predetermined distance from each other; heating the film; causing the template to press against the heated film such that a portion of the film is deformed by the protrusions; separating the template from the film; and etching the film to remove a residual layer of the film to form a nano-imprinted photonic crystal waveguide.Type: GrantFiled: March 4, 2005Date of Patent: October 2, 2007Assignee: Hewlett-Packard Development Company, L.P.Inventors: James E. Ellenson, Timothy S. Hostetler, William M. Tong
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Patent number: 7153360Abstract: A self-assembled photonic crystal is formed using a template made by nanoimprint lithography. A layer of imprintable material is deposited on a substrate, a pattern is imprinted in the imprintable material to form a template (the pattern of the template being adapted to substantially constrain colloidal particles to a predetermined lattice), and colloidal particles are introduced onto the template, substantially filling the predetermined lattice.Type: GrantFiled: December 16, 2003Date of Patent: December 26, 2006Assignee: Hewlett-Packard Development Company, LP.Inventors: Gregory S Herman, David Champion, James E. Ellenson
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Patent number: 7130207Abstract: A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise a tunnel-junction device. Methods for fusing a tunnel-junction device of a memory storage element without fusing a tunnel-junction device of an associated control element are disclosed. The memory storage element may have an effective cross-sectional area that is greater than an effective cross-sectional area of the control element. A memory structure comprises a memory storage element, a control element comprising a tunnel-junction device electrically coupled to the memory storage element and configured to control the state of the memory storage element, and a reference element. The reference element is configured as a reference to protect the control element when selectively controlling the state of the memory storage element.Type: GrantFiled: January 12, 2004Date of Patent: October 31, 2006Assignee: Hewlett-Packard Development Company, L.P.Inventors: Peter Fricke, Andrew L. Van Brocklin, James E. Ellenson
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Patent number: 6936496Abstract: A method of manufacturing a nanowire filament includes forming and fusing actions. In a forming action, close proximity conductors are formed. In another forming action, a junction oxide is formed between the close proximity conductors. In a fusing action, a nanowire filament is fused between the close proximity conductors, through the junction oxide. A circuit is also provided, having first and second close proximity conductors, and a nanowire filament fused between the close proximity conductors.Type: GrantFiled: December 20, 2002Date of Patent: August 30, 2005Assignee: Hewlett-Packard Development Company, L.P.Inventors: Neal W. Meyer, James E. Ellenson
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Patent number: 6831861Abstract: A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise a tunnel-junction device. Methods for fusing a tunnel-junction device of a memory storage element without fusing a tunnel-junction device of an associated control element are disclosed. The memory storage element may have an effective cross-sectional area that is greater than an effective cross-sectional area of the control element. A memory structure comprises a memory storage element, a control element comprising a tunnel-junction device electrically coupled to the memory storage element and configured to control the state of the memory storage element, and a reference element. The reference element is configured as a reference to protect the control element when selectively controlling the state of the memory storage element.Type: GrantFiled: January 12, 2004Date of Patent: December 14, 2004Assignee: Hewlett-Packard Development Company, L.P.Inventors: Peter Fricke, Andrew L. Van Brocklin, James E. Ellenson
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Patent number: 6821848Abstract: Tunnel-junction structures are fabricated by any of a set of related methods that form two or more tunnel junctions simultaneously. The fabrication methods disclosed are compatible with conventional CMOS fabrication practices, including both single damascene and dual damascene processes. The simultaneously formed tunnel junctions may have different areas. In some embodiments, tub-well structures are formed with sloped sidewalls. In some embodiments, an oxide-metal-oxide film stack on the sidewall of a tub-well is etched to form the tunnel junctions. Memory circuits, other integrated circuit structures, substrates carrying microelectronics, and other electronic devices made by the methods are disclosed.Type: GrantFiled: October 30, 2002Date of Patent: November 23, 2004Assignee: Hewlett-Packard Development Company, L.P.Inventors: Dennis Lazaroff, Kenneth M. Kramer, James E. Ellenson, Neal W. Meyer, David Punsalan, Kurt Ulmer, Peter Fricke, Andrew Koll, Andrew L. Van Brocklin
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Publication number: 20040145008Abstract: A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise a tunnel-junction device. Methods for fusing a tunnel-junction device of a memory storage element without fusing a tunnel-junction device of an associated control element are disclosed. The memory storage element may have an effective cross-sectional area that is greater than an effective cross-sectional area of the control element. A memory structure comprises a memory storage element, a control element comprising a tunnel-junction device electrically coupled to the memory storage element and configured to control the state of the memory storage element, and a reference element. The reference element is configured as a reference to protect the control element when selectively controlling the state of the memory storage element.Type: ApplicationFiled: January 12, 2004Publication date: July 29, 2004Inventors: Peter Fricke, Andrew L. Van Brocklin, James E. Ellenson
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Publication number: 20040141351Abstract: A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise a tunnel-junction device. Methods for fusing a tunnel-junction device of a memory storage element without fusing a tunnel-junction device of an associated control element are disclosed. The memory storage element may have an effective cross-sectional area that is greater than an effective cross-sectional area of the control element. A memory structure comprises a memory storage element, a control element comprising a tunnel-junction device electrically coupled to the memory storage element and configured to control the state of the memory storage element, and a reference element. The reference element is configured as a reference to protect the control element when selectively controlling the state of the memory storage element.Type: ApplicationFiled: January 12, 2004Publication date: July 22, 2004Inventors: Peter Fricke, Andrew L. Van Brocklin, James E. Ellenson
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Publication number: 20040121509Abstract: A method of manufacturing a nanowire filament includes forming and fusing actions. In a forming action, close proximity conductors are formed. In another forming action, a junction oxide is formed between the close proximity conductors. In a fusing action, a nanowire filament is fused between the close proximity conductors, through the junction oxide. A circuit is also provided, having first and second close proximity conductors, and a nanowire filament fused between the close proximity conductors.Type: ApplicationFiled: December 20, 2002Publication date: June 24, 2004Inventors: Neal W. Meyer, James E. Ellenson
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Patent number: 6711045Abstract: A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise a tunnel-junction device. Methods for fusing a tunnel-junction device of a memory storage element without fusing a tunnel-junction device of an associated control element are disclosed. The memory storage element may have an effective cross-sectional area that is greater than an effective cross-sectional area of the control element. A memory structure comprises a memory storage element, a control element comprising a tunnel-junction device electrically coupled to the memory storage element and configured to control the state of the memory storage element, and a reference element. The reference element is configured as a reference to protect the control element when selectively controlling the state of the memory storage element.Type: GrantFiled: September 6, 2002Date of Patent: March 23, 2004Assignee: Hewlett-Packard Development Company, L.P.Inventors: Peter Fricke, Andrew L. Van Brocklin, James E. Ellenson
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Publication number: 20030186468Abstract: Tunnel-junction structures are fabricated by any of a set of related methods that form two or more tunnel junctions simultaneously. The fabrication methods disclosed are compatible with conventional CMOS fabrication practices, including both single damascene and dual damascene processes. The simultaneously formed tunnel junctions may have different areas. In some embodiments, tub-well structures are formed with sloped sidewalls. In some embodiments, an oxide-metal-oxide film stack on the sidewall of a tub-well is etched to form the tunnel junctions. Memory circuits, other integrated circuit structures, substrates carrying microelectronics, and other electronic devices made by the methods are disclosed.Type: ApplicationFiled: October 31, 2002Publication date: October 2, 2003Inventors: Dennis Lazaroff, Kenneth M. Kramer, James E. Ellenson, Neal W. Meyer, David Punsalan, Kurt Ulmer, Peter Fricke, Andrew Koll, Andrew L. Van Brocklin
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Publication number: 20030183849Abstract: A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise a tunnel-junction device. Methods for fusing a tunnel-junction device of a memory storage element without fusing a tunnel-junction device of an associated control element are disclosed. The memory storage element may have an effective cross-sectional area that is greater than an effective cross-sectional area of the control element. A memory structure comprises a memory storage element, a control element comprising a tunnel-junction device electrically coupled to the memory storage element and configured to control the state of the memory storage element, and a reference element. The reference element is configured as a reference to protect the control element when selectively controlling the state of the memory storage element.Type: ApplicationFiled: September 6, 2002Publication date: October 2, 2003Inventors: Peter Fricke, Andrew L. Van Brocklin, James E. Ellenson