Abstract: Provided is a method of manufacturing a multi-frequency surface acoustic wave (SAW) device on a common piezoelectric substrate. The method features varying the resonant frequency of waveguide elements of the SAW device using a single etch step. The etch step removes a sub-portion of multiple layers of conductive film disposed on the substrate.

Abstract: Provided is a method of manufacturing a multi-frequency surface acoustic wave (SAW) device on a common piezoelectric substrate. The method features varying the resonant frequency of waveguide elements of the SAW device using a single etch step. The etch step removes a sub-portion of multiple layers of conductive film disposed on the substrate.

Abstract: Disclosed herein is a method of determining the fracture geometry of a subterranean fracture comprising introducing into the fracture a target particle and/or proppant; transmitting into the fracture electromagnetic radiation having a frequency of about 300 megahertz to about 100 gigahertz; and analyzing a reflected signal from the target particle to determine fracture geometry. Disclosed herein too is a method of determining the fracture geometry of a subterranean fracture comprising introducing into the fracture a target particle and/or proppant; wherein the target particle and/or proppant comprises a high dielectric constant ceramic having a dielectric constant of greater than or equal to about 2; transmitting into the fracture electromagnetic radiation having a frequency of less than or equal to about 3 gigahertz; and analyzing a reflected signal from the target particle and/or proppant to determine fracture geometry.

Abstract: Provided is a method of manufacturing a multi-frequency surface acoustic wave (SAW) device on a common piezoelectric substrate. The method features varying the resonant frequency of waveguide elements of the SAW device using a single etch step. The etch step removes a sub-portion of multiple layers of conductive film disposed on the substrate.

Abstract: A surface acoustic wave (SAW) device, a method of manufacturing the same and a SAW filter having at least one SAW device. In one embodiment, the SAW device includes: (1) a piezoelectric substrate, (2) a conductive layer located over the piezoelectric substrate and (3) a resistive layer, interposing a portion of the conductive layer and the piezoelectric substrate, that forms a return path for static charge migrating from the piezoelectric substrate to the conductive layer.

Abstract: Provided is a method of manufacturing a multi-frequency surface acoustic wave (SAW) device on a common piezoelectric substrate. The method features varying the resonant frequency of waveguide elements of the SAW device using a single etch step. The etch step removes a sub-portion of multiple layers of conductive film disposed on the substrate.

Abstract: An element of a SAW filter network, a method of filtering a signal and a SAW filter network incorporating the element or the method. In one embodiment, the element includes: (1) a SAW resonator having a nominal usable bandwidth and (2) an extrinsic capacitor coupled in parallel with the SAW resonator, the extrinsic capacitor interacting with the SAW resonator to cause an anti-resonance frequency of the element to move toward a resonance frequency thereof and thereby decrease an overall operating bandwidth of the element.

Abstract: A surface acoustic wave (SAW) device, a method of manufacturing the same and a SAW filter having at least one SAW device. In one embodiment, the SAW device includes: (1) a piezoelectric substrate, (2) a conductive layer located over the piezoelectric substrate and (3) a resistor, coupled between a portion of the conductive layer and the piezoelectric substrate, that forms a return path for static charge migrating from the piezoelectric substrate to the conductive layer.

Abstract: A module for receiving a function circuit and a method of manufacturing such module. In one embodiment, the module includes: (1) an input surface acoustic wave (SAW) circuit, located within the module and couplable to an input of the function circuit, that conditions an input signal provided to the function circuit and (2) an output SAW circuit, located within the module and couplable to an output of the function circuit, that conditions an output signal produced by the function circuit.

Abstract: A surface acoustic wave (SAW) device, a method of manufacturing the same and a SAW filter having at least one SAW device. In one embodiment, the SAW device includes: (1) a piezoelectric substrate, (2) a conductive layer located over the piezoelectric substrate and (3) a resistor, coupled between a portion of the conductive layer and the piezoelectric substrate, that forms a return path for static charge migrating from the piezoelectric substrate to the conductive layer.

Abstract: A module that contains multiple surface acoustic wave (SAW) circuits and a method of manufacturing the module. In one embodiment, the module includes: (1) a hermetically-sealable shell having first and second terminal sets, (2) a first SAW circuit, located within the shell and couplable to the first terminal set, that filters signals in a first band of communications frequencies, and (3) a second SAW circuit, located within the shell and couplable to the second terminal set, that filters signals in a second band of communications frequencies.

Abstract: A modeling system 10 comprises a central processing unit 12 coupled to an arithmetic logic unit 16. A device testing system 18 is used to empirically analyze the operational characteristics of a transistor to be modeled by the system 10. A set of parameter values are stored in a memory circuit 14 coupled to central processing unit 12. An input and display system 20 is used to interact with the central processing unit 12. The central processing unit 12 uses the arithmetic logic unit 16 to calculate an objective function which is essentially a measure of the error between the measured values of operating variables of the device to be modeled and theoretical values of the operating variables calculated using initial guesses of modeling parameters. The objective function is minimized by calculating the gradient of the objection function to obtain a next guess point with its associated parameter values.

Abstract: A modeling system 10 comprises a central processing unit 12 coupled to an arithmetic logic unit 16. A device testing system 18 is used to empirically analyze the operational characteristics of a transistor to be modeled by the system 10. A set of parameter values are stored in a memory circuit 14 coupled to central processing unit 12. An input and display system 20 is used to interact with the central processing unit 12. The central processing unit 12 uses the arithmetic logic unit 16 to calculate an objective function which is essentially a measure of the error between the measured values of operating variables of the device to be modeled and theoretical values of the operating variables calculated using initial guesses of modeling parameters. The objective function is minimized by calculating the gradient of the objection function to obtain a next guess point with its associated parameter values.