Abstract: A system and method of reducing the introduction of foreign material to wafers. A system includes an enclosure structured and arranged to carry wafers used in semiconductor device manufacturing, and an attractive material arranged as at least a portion of an interior surface of the enclosure.

Abstract: An improved method of stabilizing wet chemical baths is disclosed. Typically such baths are used in processes for treating workpieces, for example, plating processes for plating metal onto substrates. In particular, the present invention relates to copper plating baths. More particularly, the present invention relates to the stability of copper plating baths. More particularly, the present invention relates to prevention of void formation by monitoring the accumulation of deleterious by-products in copper plating baths.

Abstract: A wafer carrying structure is provided that allows more efficient operation of the opening and closing mechanisms. More specifically, the wafer carrier includes pressure relief structures that provide appropriate pressure equalization during the opening and closing operations of the wafer carrier. This allows doors on the wafer to be more easily opened and closed while also providing significant environmental isolation for the wafers during transport operations. Relief structures specifically designed to remain closed except for those brief periods of time where pressure relief is necessary to equalize pressure during opening and closing of the carrier.

Abstract: A system and method of reducing the introduction of foreign material to wafers. A system includes an enclosure structured and arranged to carry wafers used in semiconductor device manufacturing, and an attractive material arranged as at least a portion of an interior surface of the enclosure.

Abstract: An aqueous seeding solution of palladium acetate, acetic acid and chloride.

Abstract: A method to electrolessly plate a CoWP alloy on copper in a reproducible manner that is effective for a manufacturable process. In the method, a seed layer of palladium (Pd) is deposited on the copper by an aqueous seeding solution of palladium acetate, acetic acid and chloride. Thereafter, a complexing solution is applied to remove any Pd ions which are adsorbed on surfaces other than the copper. Finally, a plating solution of cobalt (Co), tungsten (W) and phosphorous (P) is applied to the copper so as to deposit a layer of CoWP on the Pd seed and copper.

Abstract: Interconnect structures with copper conductors being at least substantially free of internal seams or voids are obtained employing an electroplating copper bath containing dissolved cupric salt wherein the concentration of the salt is at least about 0.4 molar and up to about 0.5 molar concentration of an acid. Also provided are copper damascene structures having an aspect ratio of greater than about 3 and a width of less than about 0.275 ?m and via openings filled with electroplated copper than is substantially free of internal seams or voids.

Abstract: Interconnect structures with copper conductors being at least substantially free of internal seams or voids are obtained employing an electroplating copper bath containing dissolved cupric salt wherein the concentration of the salt is at least about 0.4 molar and up to about 0.5 molar concentration of an acid. Also provided are copper damascene structures having an aspect ratio of greater than about 3 and a width of less than about 0.275 &mgr;m and via openings filled with electroplated copper than is substantially free of internal seams or voids.

Abstract: Interconnect structures with copper conductors being at least substantially free of internal seams or voids are obtained employing an electroplating copper bath containing dissolved cupric salt wherein the concentration of the salt is at least about 0.4 molar and up to about 0.5 molar concentration of an acid. Also provided are copper damascene structures having an aspect ratio of greater than about 3 and a width of less than about 0.275 &mgr;m and via openings filled with electroplated copper than is substantially free of internal seams or voids.

Abstract: A method for controlling the shape of copper features, having the following steps:

Abstract: A method for controlling the composition of a chemical bath in which predictive dosing is used to account for changes in the composition of the bath in which the operating characteristics of the process are partitioned into a plurality of operating modes and the consumption or generation of materials related to the process are determined empirically and additions of material are made as appropriate.

Abstract: An electroless touch-up process for repairing copper metallization deposited in dual damascene structures with high aspect ratios. An initial copper strike layer is produced by directional deposition techniques such that discontinuous sidewall coverage occurs. An evolutionary electroless touch-up process then proceeds to conformally grow the copper layer on all surfaces. The result of the evolutionary process is to produce a continuous copper strike layer that can be used with conventional electroplating techniques.

Abstract: A metal plating apparatus is described which includes a compressible member having a conductive surface covering substantially all of the surface of the substrate to be plated. The plating current is thereby transmitted over a wide area of the substrate, rather than a few localized contact points. The compressible member is porous so as to absorb the plating solution and transmit the plating solution to the substrate. The wafer and compressible member may rotate with respect to each other. The compressible member may be at cathode potential or may be a passive circuit element.

Abstract: A method for electroplating a film onto a substrate. Electrical power is supplied to the plating surface through electrical contact made to contact pads on the underside of the substrate. Contact to the contact pads is made within a liquid-tight region. The contact pads are connected to the plating surface through the substrate. Because the contact scheme is provided within a liquid-tight region on the underside of the substrate, the contacts do not erode or become plated, nor do they consume an area of the plating surface.

Abstract: A method and apparatus for electroplating a film onto a substrate. Electrical power is supplied to the plating surface through electrical contact made to contact pads on the underside of the substrate. Contact to the contact pads is made within a liquid-tight region. The contact pads are connected to the plating surface through the substrate. Because the contact scheme is provided within a liquid-tight region on the underside of the substrate, the contacts do not erode or become plated, nor do they consume an area of the plating surface.