Abstract: A method of quantum efficiency (QE) photovoltaic measurement is provided that includes coupling measurement electronics to a p-n junction of a Cell Under Test (CUT) that are capable of measuring a pulsed DC photocurrent. The measurement electronics output a response by the CUT to turning on and turning off the pulsed DC photocurrent that are digitized and analyzed for the magnitude that is representative of a conversion efficiency of the CUT to a wavelength of the DC photocurrent, where a measured decay time represents the p-n junction or the minority carrier lifetime. The CUT is exposed to the pulsed DC photocurrent, where signatures of the response to turning off and on to the pulsed DC photocurrent overlap, where a combined amplitude of the response is proportional to an efficiency of a production of photocarriers, where a value of a spectral response at a wavelength is determined.

Abstract: A method of quantum efficiency (QE) photovoltaic measurement is provided that includes coupling measurement electronics to a p-n junction of a Cell Under Test (CUT) that are capable of measuring a pulsed DC photocurrent. The measurement electronics output a response by the CUT to turning on and turning off the pulsed DC photocurrent that are digitized and analyzed for the magnitude that is representative of a conversion efficiency of the CUT to a wavelength of the DC photocurrent, where a measured decay time represents the p-n junction or the minority carrier lifetime. The CUT is exposed to the pulsed DC photocurrent, where signatures of the response to turning off and on to the pulsed DC photocurrent overlap, where a combined amplitude of the response is proportional to an efficiency of a production of photocarriers, where a value of a spectral response at a wavelength is determined.

Abstract: The present invention provides a high-speed Quantum Efficiency (QE) measurement device that includes at least one device under test (DUT), at least one conditioned light source with a less than 50 nm bandwidth, where a portion of the conditioned light source is monitored. Delivery optics are provided to direct the conditioned light to the DUT, a controller drives the conditioned light source in a time dependent operation, and at least one reflectance measurement assembly receives a portion of the conditioned light reflected from the DUT. A time-resolved measurement device includes a current measurement device and/or a voltage measurement device disposed to resolve a current and/or voltage generated in the DUT by each conditioned light source, where a sufficiently programmed computer determines and outputs a QE value for each DUT according to an incident intensity of at least one wavelength of from the conditioned light source and the time-resolved measurement.

Abstract: The current invention provides a shunt defect detection device that includes a device under test (DUT) that is fixedly held by a thermally isolating mount, a power source disposed to provide a directional bias condition to the DUT, a probe disposed to provide a localized power to the DUT from the power source, an emission detector disposed to measure a temporal emission from the DUT when in the directional bias condition, where the measured temporal emission is output as temporal data from the emission detector to a suitably programmed computer that uses the temporal data to determine a heating rate of the DUT and is disposed to estimate an overheat risk level of the DUT, where an output from the computer designates the DUT a pass status, an uncertain status, a fail status or a process to bin status according to the overheat risk level.

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.

Abstract: The present invention provides a high-speed Quantum Efficiency (QE) measurement device that includes at least one device under test (DUT), at least one conditioned light source with a less than 50 nm bandwidth, where a portion of the conditioned light source is monitored. Delivery optics are provided to direct the conditioned light to the DUT, a controller drives the conditioned light source in a time dependent operation, and at least one reflectance measurement assembly receives a portion of the conditioned light reflected from the DUT. A time-resolved measurement device includes a current measurement device and/or a voltage measurement device disposed to resolve a current and/or voltage generated in the DUT by each conditioned light source, where a sufficiently programmed computer determines and outputs a QE value for each DUT according to an incident intensity of at least one wavelength of from the conditioned light source and the time-resolved measurement.

Abstract: The current invention provides a shunt defect detection device that includes a device under test (DUT) that is fixedly held by a thermally isolating mount, a power source disposed to provide a directional bias condition to the DUT, a probe disposed to provide a localized power to the DUT from the power source, an emission detector disposed to measure a temporal emission from the DUT when in the directional bias condition, where the measured temporal emission is output as temporal data from the emission detector to a suitably programmed computer that uses the temporal data to determine a heating rate of the DUT and is disposed to estimate an overheat risk level of the DUT, where an output from the computer designates the DUT a pass status, an uncertain status, a fail status or a process to bin status according to the overheat risk level.

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.

Abstract: The invented voltage regulator is a solid state low voltage regulator for quartz halogen or low voltage incandescent lamps and quartz halogen or low voltage incandescent lamp or LED array circuits wherein the volt regulator reduces a conventional mains power line source of, for example, a 115 volt AC to 480 V AC power source, to within a range of from 11.0 volts to 12.5 volts, preferably 11.6 volts, wherein the lamps, and LED arrays have consistent color, consistent light output, the lamp filaments and LED arrays are exposed to soft start operating currents and lamp and array life can be increased. The voltage regulator utilizes an AC rectifier circuit to provide a pulsing DC voltage, a DC voltage sensing circuit, a soft start oscillator circuit, an internal DC voltage oscillator reference circuit and an AC power line control circuit.

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam.

Abstract: An apparatus for producing a uniform magnetic field in a test sample having an angled end during a magnetic particle test procedure, includes a conductive, angled fixture having a contact surface and an overall shape corresponding to that of the angled end of the test sample, so that when a pulsed current is passed through the blade, the resulting uniform magnetic field permits detection of defect indications in the angled end.

Abstract: A volumetric infusion actuator providing a slot means for receiving a valved cassette having exposed valve pads. An actuation means for automatically moving individual arms into and out of engagement with the valve pads according to a predetermined cycle which governs flow through the cassette.

Abstract: Three embodiments of a metering unit (10, 140, 200) are provided for metering fluid from a container (14) for infusion into a patient. The first embodiment of the metering unit (10) includes a cassette (26) formed of halves (28, 30). The halves (28, 30) each have a concave reservoir portion (36) formed on the inner face (32) thereon. Entry and exit channels (38, 42) extend from the reservoir portions adjacent entry and exit orifices (40, 44). Entry and exit port portions (46, 50) are formed in each half (28, 30). Flexible entry and exit valves (58, 64, 86 and 88) are movable between an open position, permitting fluid to flow through the orifices, to a closed position, preventing fluid from flowing through the orifices. The halves are separated by a flexible diaphragm (70) which divides a reservoir (76) into first and second compartments (78, 80).