Abstract: A method is provided for removing residual amounts of oxygen and water vapor from the controlled atmosphere of an enclosed chamber. A small volume of high-purity silicon is heated in a crucible placed inside the chamber. The silicon is typically heated with a power source separate from that used for heating the chamber and its primary contents. The heated silicon functions as an effective oxygen getter for removing residual oxygen and water vapor from the controlled atmosphere before and/or during a process conducted in the chamber. Heating the silicon to a molten state can induce beneficial convective stirring that keeps the silicon surface fresh for effective, efficient, and continuous capturing of oxygen.