Patents by Inventor James E. Mac Dougall

James E. Mac Dougall has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ionic additives for extreme low dielectric constant chemical formulations
    Patent number: 7265062
    Abstract: A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution.
    Type: Grant
    Filed: August 7, 2003
    Date of Patent: September 4, 2007
    Assignees: Applied Materials, Inc., Air Products and Chemicals, Inc.
    Inventors: Robert P. Mandal, Alexandros T. Demos, Timothy Weidman, Michael P. Nault, Nikolaos Bekiaris, Scott Jeffrey Weigel, Lee A. Senecal, James E. Mac Dougall, Hareesh Thridandam
  • Ionic additives for extreme low dielectric constant chemical formulations
    Publication number: 20040087184
    Abstract: A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution.
    Type: Application
    Filed: August 7, 2003
    Publication date: May 6, 2004
    Applicants: APPLIED MATERIALS INC., A Delaware corporation, AIR PRODUCTS AND CHEMICALS INC., A Delaware Corporation
    Inventors: Robert P. Mandal, Alexandros T. Demos, Timothy Weidman, Michael P. Nault, Nikolaos Bekiaris, Scott J. Weigel, Lee A. Senecal, James E. Mac Dougall, Hareesh Thridandam
  • Ionic additives for extreme low dielectric constant chemical formulations
    Publication number: 20030008525
    Abstract: A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution.
    Type: Application
    Filed: August 13, 2002
    Publication date: January 9, 2003
    Applicant: APPLIED MATERIALS INC.
    Inventors: Robert P. Mandal, Alexandros T. Demos, Timothy Weidman, Michael P. Nault, Nikolaos Bekiaris, Scott J. Weigel, Lee A. Senecal, James E. Mac Dougall, Hareesh Thridandam