Patents by Inventor James E. Prendergast

James E. Prendergast has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Insulated gate semiconductor device and method of manufacture
    Patent number: 5541132
    Abstract: An insulated gate field effect transistor (10) having an reduced gate to drain capacitance and a method of manufacturing the field effect transistor (10). A dopant well (13) is formed in a semiconductor material (11). A gate oxide layer (26) is formed on the dopant well (13) wherein the gate oxide layer (26) and a gate structure (41) having a gate contact portion (43) and a gate extension portion (44). The gate contact portion (43) permits electrical contact to the gate structure (41), whereas the gate extension portion (44) serves as the active gate portion. A portion of the gate oxide (26) adjacent the gate contact portion (43) is thickened to lower a gate to drain capacitance of the field effect transistor (10) and thereby increase a bandwidth of the insulated gate field effect transistor (10).
    Type: Grant
    Filed: March 21, 1995
    Date of Patent: July 30, 1996
    Assignee: Motorola, Inc.
    Inventors: Robert B. Davies, Vida Ilderem, Mark D. Griswold, Diann Dow, James E. Prendergast, Iksung Lim, Juan Buxo, Richard D. Sivan, James D. Burnett, Frank K. Baker