Patents by Inventor James E. Rapp

James E. Rapp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9310228
    Abstract: A compressed air indicator includes a housing having a pair of fittings and at least one (1) external pressure status window. The housing allows an “in-line” connection to an air line allowing compressed air to pass through. Once connected, movable indicator sleeves within the housing are visible through any window. The indicator sleeves are acted upon and correspondingly positioned relative to each window based upon “pressure” or “no-pressure” conditions within the air line and the housing.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: April 12, 2016
    Inventor: James E. Rapp
  • Patent number: 7947214
    Abstract: This process is a fused glass powder process for making ceramic billets for semiconductor dopants. The powder process uses a unique combination of steps for packing, compacting and heat treating the powders. The resulting billets may be tailored in composition to provide a variety of densities, rigidities and B2O3 evolution rates. Further, the resulting wafers have a large diameter to meet the needs of semiconductor production.
    Type: Grant
    Filed: October 19, 2005
    Date of Patent: May 24, 2011
    Inventor: Jame E. Rapp
  • Patent number: 6461948
    Abstract: A method of doping silicon that involves placing a silicon wafer in spaced relationship to a solid phosphorus dopant source at a first temperature for a time sufficient to deposit a phosphorus-containing layer on the surface of the wafer and subsequently oxidizing the doped silicon wafer with wet oxygen or pyrogenic steam at a second temperature lower than the first temperature. The silicon wafer is maintained in spaced relationship to the solid phosphorus dopant source during the oxidizing step. The temperatures are selected such that the solid phosphorus dopant source evolves P2O5 at the first temperature and the second temperature is sufficiently lower than the first temperature to decrease evolution of P2O5 from the solid phosphorus dopant source during the oxidizing step.
    Type: Grant
    Filed: March 29, 2000
    Date of Patent: October 8, 2002
    Assignee: Techneglas, Inc.
    Inventors: James E. Rapp, Russell B. Rogenski
  • Patent number: 5656541
    Abstract: The present invention relates to a solid low temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and the doped silicon wafer.
    Type: Grant
    Filed: July 5, 1995
    Date of Patent: August 12, 1997
    Assignee: Techneglas, Inc.
    Inventors: James E. Rapp, Gary R. Pickrell
  • Patent number: 5629234
    Abstract: The present invention relates to a solid high temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 3 and R is La, Y, Ce, Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and to the doped silicon wafer.
    Type: Grant
    Filed: October 19, 1995
    Date of Patent: May 13, 1997
    Assignee: Techneglas, Inc.
    Inventors: Gary R. Pickrell, James E. Rapp
  • Patent number: 5350461
    Abstract: The present invention relates to a solid low temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and the doped silicon wafer.
    Type: Grant
    Filed: December 8, 1992
    Date of Patent: September 27, 1994
    Assignee: Techneglas, Inc.
    Inventors: Gary R. Pickrell, James E. Rapp
  • Patent number: 5350460
    Abstract: The present invention relates to a solid high temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 3 and R is La, Y, Ce, Nd, Eu, Pt, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and to the doped silicon wafer.
    Type: Grant
    Filed: December 8, 1992
    Date of Patent: September 27, 1994
    Assignee: Techneglas, Inc.
    Inventors: Gary R. Pickrell, James E. Rapp
  • Patent number: 4891331
    Abstract: A doping composition and method for doping a silicon wafer with phosphorous in which the composition contains (A) a high purity Al.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound having a mole ratio of P.sub.2 O.sub.5 /Al.sub.2 O.sub.3 of about 1/1 to 4/1: and (B) a vehicle for the Al.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound for application as a paste to provide a thin layer on the silicon wafer which is fired to provide an easily-removed powdery layer on the wafer.
    Type: Grant
    Filed: January 21, 1988
    Date of Patent: January 2, 1990
    Assignee: OI-NEG TV Products, Inc.
    Inventor: James E. Rapp
  • Patent number: 4800175
    Abstract: A boron-containing heterocyclic compound prepared by reacting a primary amine of ammonia with an alkylene oxide or epoxide and then reacting concurrently or subsequently this reaction intermediate with a boric acid. This boron-containing heterocyclic compound may further be reacted with a metal metalloid or other metal compound and even further contain sulfur, such as a sulfide group.
    Type: Grant
    Filed: May 29, 1987
    Date of Patent: January 24, 1989
    Assignee: Owens-Illinois Television Products Inc.
    Inventor: James E. Rapp
  • Patent number: 4379006
    Abstract: Disclosed is a method of evolving B.sub.2 O.sub.3 from certain B.sub.2 O.sub.3 containing glass-ceramics by heating the glass-ceramic in the pressure of helium as a carrier or transport gas.
    Type: Grant
    Filed: August 7, 1981
    Date of Patent: April 5, 1983
    Assignee: Owens-Illinois, Inc.
    Inventor: James E. Rapp
  • Patent number: 4282282
    Abstract: Disclosed are thermally crystallizable glass compositions, glass ceramics and dopant hosts made therefrom, wherein said dopant hosts in thin wafer form have improved resistance to warpage, said compositions containing SiO.sub.2, Al.sub.2 O.sub.3, MgO, BaO, and B.sub.2 O.sub.3.
    Type: Grant
    Filed: October 3, 1977
    Date of Patent: August 4, 1981
    Assignee: Owens-Illinois, Inc.
    Inventor: James E. Rapp
  • Patent number: 4175988
    Abstract: Disclosed are new polycrystalline ceramic bodies formed from melts containing as essential components P.sub.2 O.sub.5, Ta.sub.2 O.sub.3 and Al.sub.2 O.sub.3 and sometimes containing small amounts of SiO.sub.2. Also disclosed are such bodies in the form of planar dopant hosts for doping silicon or germanium with phosphorus. Methods of making both products are disclosed as well as how to use the dopant hosts in a doping process.
    Type: Grant
    Filed: August 14, 1978
    Date of Patent: November 27, 1979
    Assignee: Owens-Illinois, Inc.
    Inventor: James E. Rapp
  • Patent number: 4160672
    Abstract: Disclosed are B.sub.2 O.sub.3 -containing glass-ceramic bodies made by in situ thermal crystallization of glasses and useful as a host for diffusion doping of semiconductors by the vapor phase transport of B.sub.2 O.sub.3 to the semiconductor from the glass-ceramic which in mole percent consists essentially of SiO.sub.2 15-40, Al.sub.2 O.sub.3 15-30, B.sub.2 O.sub.3 20-60, RO 5-25, La.sub.2 O.sub.3 0-5, Nb.sub.2 O.sub.5 0-5 and Ta.sub.2 O.sub.5 0-5 wherein RO is selected from MgO, CaO, SrO and BaO in specified percentages, and mixtures thereof and wherein the ratio Al.sub.2 O.sub.3 to RO is 1.5-4.
    Type: Grant
    Filed: February 18, 1976
    Date of Patent: July 10, 1979
    Assignee: Owens-Illinois, Inc.
    Inventor: James E. Rapp
  • Patent number: 4141738
    Abstract: Disclosed are new polycrystalline ceramic bodies formed from melts containing as essential components P.sub.2 O.sub.5, Ta.sub.2 O.sub.3 and Al.sub.2 O.sub.3 and sometimes containing small amounts of SiO.sub.2. Also disclosed are such bodies in the form of planar dopant hosts for doping silicon or germanium with phosphorus. Methods of making both products are disclosed as well as how to use the dopant hosts in a doping process.
    Type: Grant
    Filed: March 16, 1978
    Date of Patent: February 27, 1979
    Assignee: Owens-Illinois, Inc.
    Inventor: James E. Rapp
  • Patent number: 4069031
    Abstract: Thermally crystallizable glasses of the Na.sub.2 O--Ta.sub.2 O.sub.5 --SiO.sub.2 and the Na.sub.2 O--Li.sub.2 O--Ta.sub.2 O.sub.5 --SiO.sub.2 systems, and glass-ceramics made therefrom which are highly transparent, have high indices of refraction, and excellent strength properties. By varying the heat treatment schedule for crystallization of a glass to a glass-ceramic, a specific high index of refraction coming within a prescribed range may be imparted to the finished, transparent glass-ceramic. A transparent glass-ceramic having two or more different indices of refraction may also be produced.
    Type: Grant
    Filed: November 30, 1976
    Date of Patent: January 17, 1978
    Assignee: Owens-Illinois, Inc.
    Inventor: James E. Rapp
  • Patent number: 3998667
    Abstract: Disclosed are B.sub.2 O.sub.3 -containing glass-ceramic bodies made by in situ thermal crystallization of glasses and useful as a host for diffusion doping of semiconductors by the vapor phase transport of B.sub.2 O.sub.3 to the semiconductor from the glass-ceramic which in mole percent consists essentially of over 40 and up to 60 SiO.sub.2, 10 to 30 Al.sub.2 O.sub.3, 20 to 40 B.sub.2 O.sub.3 and 3 to 20 alkaline earth oxides including 1 to 15 BaO wherein the ratio of Al.sub.2 O.sub.3 to alkaline earth oxides is from 1.5 to 4.
    Type: Grant
    Filed: December 19, 1975
    Date of Patent: December 21, 1976
    Assignee: Owens-Illinois, Inc.
    Inventor: James E. Rapp
  • Patent number: 3984251
    Abstract: Thermally crystallizable glasses of the Na.sub.2 O--Ta.sub.2 O.sub.5 --SiO.sub.2 and the Na.sub.2 O--Li.sub.2 O--Ta.sub.2 O.sub.5 --SiO.sub.2 systems, and glass-ceramics made therefrom which are highly transparent, have high indices of refraction, and excellent strength properties. The glasses of the first system consist essentially of about 37-55 mole percent SiO.sub.2, 23-35 mole percent Ta.sub.2 O.sub.5, and 20-33 mole percent Na.sub.2 O, preferably where the molar ratio of Na.sub.2 O to Ta.sub.2 O.sub.5 is about 1, and for the second system the glasses consist essentially of about 27-45 mole percent SiO.sub.2, 32-45 mole percent Ta.sub.2 O.sub.5, and 20-35 mole percent Li.sub.2 O plus Na.sub.2 O, preferably wherein the molar ratio of Li.sub.2 O to Na.sub.2 O is within the range of from 0.7:1 to 1.2:1, and the molar ratio of Na.sub.2 O + Li.sub.2 O to Ta.sub.2 O.sub.5 is within the range of 0.5:1 to about 1:1.
    Type: Grant
    Filed: August 5, 1971
    Date of Patent: October 5, 1976
    Assignee: Owens-Illinois, Inc.
    Inventor: James E. Rapp
  • Patent number: 3962000
    Abstract: Disclosed is a method for diffusion doping of silicon and germanium semiconductors by the vapor phase transport of B.sub.2 O.sub.3 from a solid B.sub.2 O.sub.3 source to the semiconductor, wherein the solid B.sub.2 O.sub.3 source comprises a rigid, dimensionally stable, glass-ceramic body formed from certain barium aluminoborosilicate parent glass compositions which in mole percent consist essentially of over 40 and up to 60 SiO.sub.2, 10 to 30 Al.sub.2 O.sub.3, 20 to 40 B.sub.2 O.sub.3 and 3 to 20 alkaline earth oxides including 1 to 15 BaO.
    Type: Grant
    Filed: December 20, 1974
    Date of Patent: June 8, 1976
    Assignee: Owens-Illinois, Inc.
    Inventor: James E. Rapp
  • Patent number: 3961969
    Abstract: Disclosed is a method for diffusion doping of silicon and germanium semiconductors by the vapor phase transport of B.sub.2 O.sub.3 from a solid B.sub.2 O.sub.3 source to the semiconductor, wherein the solid B.sub.2 O.sub.3 source comprises a rigid, dimensionally stable, glass-ceramic body formed from certain alkaline earth aluminoborosilicate parent glass compositions. The glass-ceramic bodies contain up to 60 mole % of B.sub.2 O.sub.3 and are dimensionally stable at doping temperatures of 1050.degree.C and higher.
    Type: Grant
    Filed: December 23, 1974
    Date of Patent: June 8, 1976
    Assignee: Owens-Illinois, Inc.
    Inventor: James E. Rapp
  • Patent number: 3947089
    Abstract: Disclosed are stable, homogeneous GeO.sub.2 -B.sub.2 O.sub.3 -PbO-Bi.sub.2 O.sub.3 glass compositions having high indices of refraction, low sound velocities, low acoustic loss and high Verdet constants which render them useful in acoustooptic and magnetooptic devices.
    Type: Grant
    Filed: May 5, 1975
    Date of Patent: March 30, 1976
    Assignee: Owens-Illinois, Inc.
    Inventor: James E. Rapp