Abstract: An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.

Abstract: The present invention employs an internal inductive antenna capable of generating a helicon wave for generating a plasma. One embodiment of the present invention employs loop type antenna secured within a bell shaped portion of the chamber. Another embodiment employs a flat coil type antenna secured within the chamber. In the preferred embodiments, the internal antenna of the present invention is constructed to prevent sputtering of the antenna. The antenna may be formed of a non-sputtering conductive material, or may formed a conductive material surrounded, completely or partially, by a non-sputtering jacket. In one embodiment, the non-sputtering jacket may be coupled to the chamber wall so that heat generated by the antenna is transferred between the jacket and the chamber wall by conduction. Preferably, the non-sputtering jacket is formed of a material that also is electrically insulative with the surface of the antenna exposed to plasma being segmented to inhibit eddy current in conductive deposits.

Abstract: The present invention employs a plurality of small inductive antennas to generate a processing plasma. In one embodiment, small coil antennas are secured within the chamber so that both of the pole regions of the antennas couple power to the plasma. The antennas may be oriented so that poles regions are anywhere from perpendicular, to parallel to a chamber wall. The number, location, and orientation of the small antennas within the chamber may be selected to optimize plasma characteristics. In addition, the antennas may be secured to top, side, or bottom walls to improve plasma characteristics; and power deposition within the processing chamber may be adjusted by changing the orientation of the coils, and the magnitude and phase relationship of RF power through the individual antennas. Process gas may be selectively delivered to areas of high power deposition such as adjacent pole regions or through the center of a coil or loop antenna to control plasma characteristics.

Abstract: Apparatus for retaining a workpiece in a semiconductor wafer processing system. The apparatus has a collector positioned between an electrostatic chuck pedestal and the floor of the processing chamber. The collector has inlet and exhaust control valves connected to inlet and exhaust ports for providing and expelling a backside heat transfer gas (e.g., Helium). Heat transfer exhaust cavities in the collector are connected to the exhaust port to rapidly draw the gas off the backside of the wafer. Additionally, control of the heat transfer gas layer uniformity during processing is achieved by opening and closing the valves to the inlet and exhaust ports as required.