Patents by Inventor James Edward Kendig

James Edward Kendig has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for preparation of polycrystalline silicon
    Patent number: 7033561
    Abstract: A process for preparing polycrystalline silicon comprising the steps of (A) reacting trichlorosilane with hydrogen thereby forming silicon and an effluent mixture comprising tetrachlorosilane and disilane described by formula HnCl6—nSi2 where n is a value of 0 to 6 and (B) co-feeding the effluent mixture and hydrogen to a reactor at a temperature within a range of about 600° C. to 1200° C. thereby effecting hydrogenation of the tetrachlorosilane and conversion of the disilane to monosilanes.
    Type: Grant
    Filed: May 23, 2002
    Date of Patent: April 25, 2006
    Assignee: Dow Corning Corporation
    Inventors: James Edward Kendig, David Russell Landis, Todd Michael McQuiston, Michael Matthew Zalar
  • Process for preparation of polycrystalline silicon
    Publication number: 20040131528
    Abstract: A process for preparing polycrystalline silicon comprising the steps of (A) reacting trichlorosilane with hydrogen thereby forming silicon and an effluent mixture comprising tetrachlorosilane and disilane described by formula HnCl6—NSi2 where n is a value of 0 to 6 and (B) co-feeding the effluent mixture and hydrogen to a reactor at a temperature within a range of about 600° C. to 1200° C. thereby effecting hydrogenation of the tetrachlorosilane and conversion of the disilane to monosilanes.
    Type: Application
    Filed: September 23, 2003
    Publication date: July 8, 2004
    Inventors: James Edward Kendig, David Russell Landis, Todd Michael MC Quiston, Michael Matthew Zalar
  • Process for preparation of polycrystalline silicon
    Publication number: 20020187096
    Abstract: A process for preparing polycrystalline silicon comprising the steps of (A) reacting trichlorosilane with hydrogen thereby forming silicon and an effluent mixture comprising tetrachlorosilane and disilane described by formula HnCl6−nSi2 where n is a value of 0 to 6 and (B) co-feeding the effluent mixture and hydrogen to a reactor at a temperature within a range of about 600° C. to 1200° C. thereby effecting hydrogenation of the tetrachlorosilane and conversion of the disilane to monosilanes.
    Type: Application
    Filed: June 8, 2001
    Publication date: December 12, 2002
    Inventors: James Edward Kendig, David Russell Landis, Todd Michael McQuiston