Abstract: The present disclosure is drawn to electrocaloric devices, methods of making electrocaloric integrated circuits, and methods of thermally cycling integrated circuits. The electrocaloric device can include an electrocaloric material having a solid solution of two or more components of BNT, BKT, BZT, BMgT, or BNiT. The electrocaloric material can have an ergodic transition temperature within a range of 50 C to 300 C. The device can also include electrodes associated with the electrocaloric material, as well as an electrical source to add or reduce electrical field between the electrodes across the electrocaloric material to generate heating or cooling relative to the ergodic transition temperature of the electrocaloric material.

Abstract: The present disclosure is drawn to electrocaloric devices, methods of making electrocaloric integrated circuits, and methods of thermally cycling integrated circuits. The electrocaloric device can include an electrocaloric material having a solid solution of two or more components of BNT, BKT, BZT, BMgT, or BNiT. The electrocaloric material can have an ergodic transition temperature within a range of 50 C to 300 C. The device can also include electrodes associated with the electrocaloric material, as well as an electrical source to add or reduce electrical field between the electrodes across the electrocaloric material to generate heating or cooling relative to the ergodic transition temperature of the electrocaloric material.

Abstract: The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous metal resistor, including an insulated substrate and a resistor applied to the insulated substrate. The resistor can include from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron; and from 5 atomic % to 90 atomic % each of a first and second metal of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum, where the second metal is different than the first metal. The metalloid, the first metal, and the second metal can account for at least 70 atomic % of the amorphous thin metal film.