Abstract: Systems and methods for controlling a plasma sheath characteristic are described. One of the methods includes determining a first value of the plasma sheath characteristic of a plasma sheath formed within a plasma chamber. The method further includes determining whether the first value of the plasma sheath characteristic is within a predetermined range from a preset value of the plasma sheath characteristic. The method also includes modifying a variable of a radio frequency (RF) generator coupled to the plasma chamber via an impedance matching circuit upon determining that the first value is not within the predetermined range from the preset value. The operation of modifying the variable of the RF generator is performed until it is determined that the first value of the plasma sheath characteristic is within the predetermined range from the preset value.

Abstract: A method for selectively etching one exposed material of a substrate relative to another exposed material of the substrate includes a) arranging the substrate in a processing chamber; b) setting a chamber pressure; c) setting an RF frequency and an RF power for RF plasma; d) supplying a plasma gas mixture to the processing chamber; e) striking the RF plasma in the processing chamber in one of an electric mode (E-mode) and a magnetic mode (H-mode); and f) during plasma processing of the substrate, changing at least one of the chamber pressure, the RF frequency, the RF power and the plasma gas mixture to switch from the one of the E-mode and the H-mode to the other of the E-mode and the H-mode.

Abstract: A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is cylindrically-shaped and surrounds an upper region of a substrate processing chamber. The transition member is connected to the sidewall. The top wall is connected to the transition member. The injector connecting member is connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector. Gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber. A center height to low inner diameter ratio of the chamber member is 0.25-0.5 and/or a center height to outer height ratio of the chamber member is 0.4-0.85.

Abstract: A substrate support includes an inner portion arranged to support a substrate, a lift ring surrounding the inner portion, the lift ring arranged to support an outer edge of the substrate, and a controller configured to control an actuator to adjust a height of the lift ring relative to the inner portion by selectively raising and lowering at least one of the lift ring and the inner portion of the substrate support. To adjust the height of the lift ring, the controller selectively adjusts the height of the lift ring to a transfer height for transfer of the substrate to the lift ring and retrieval of the substrate from the lift ring, and adjusts the height of the lift ring to a processing height for processing of the substrate.

Abstract: A system is provided and includes a substrate processing chamber, one or more injectors, and a controller. The one or more injectors inject an electronegative gas, a baseline electropositive gas, and an additional electropositive gas into the substrate processing chamber. The electronegative gas includes an etch precursor. The additional electropositive gas mixes with and increases electron density of a plasma in the substrate processing chamber. The controller is configured to set an amount, flow rate or pressure of the additional electropositive gas based on at least one of a pressure of the electronegative gas or an electron affinity level of the additional electropositive gas.

Abstract: A method for selectively etching one exposed material of a substrate relative to another exposed material of the substrate includes a) arranging the substrate in a processing chamber; b) setting a chamber pressure; c) setting an RF frequency and an RF power for RF plasma; d) supplying a plasma gas mixture to the processing chamber; e) striking the RF plasma in the processing chamber in one of an electric mode (E-mode) and a magnetic mode (H-mode); and f) during plasma processing of the substrate, changing at least one of the chamber pressure, the RF frequency, the RF power and the plasma gas mixture to switch from the one of the E-mode and the H-mode to the other of the E-mode and the H-mode.

Abstract: A substrate support includes an inner portion arranged to support a substrate, a lift ring surrounding the inner portion, the lift ring arranged to support an outer edge of the substrate, and a controller configured to control an actuator to adjust a height of the lift ring relative to the inner portion by selectively raising and lowering at least one of the lift ring and the inner portion of the substrate support. To adjust the height of the lift ring, the controller selectively adjusts the height of the lift ring to a transfer height for transfer of the substrate to the lift ring and retrieval of the substrate from the lift ring, and adjusts the height of the lift ring to a processing height for processing of the substrate.

Abstract: A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is cylindrically-shaped and surrounds an upper region of a substrate processing chamber. The transition member is connected to the sidewall. The top wall is connected to the transition member. The injector connecting member is connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector. Gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber. A center height to low inner diameter ratio of the chamber member is 0.25-0.5 and/or a center height to outer height ratio of the chamber member is 0.4-0.85.

Abstract: A system is provided and includes a substrate processing chamber, one or more injectors, and a controller. The one or more injectors inject an electronegative gas, a baseline electropositive gas, and an additional electropositive gas into the substrate processing chamber. The electronegative gas includes an etch precursor. The additional electropositive gas mixes with and increases electron density of a plasma in the substrate processing chamber. The controller is configured to set an amount, flow rate or pressure of the additional electropositive gas based on at least one of a pressure of the electronegative gas or an electron affinity level of the additional electropositive gas.