Abstract: Compounds having three or more alkynyl moieties substituted with an aromatic moiety having one or more of certain substituents are useful in forming underlayers useful in semiconductor manufacturing processes.

Abstract: A photoresist underlayer composition comprising a poly(arylene ether); an additive of formula (14): D-(L1-Ar—[X]n)m??(14); and a solvent, wherein, in formula (14), D is a substituted or unsubstituted C1-60 organic group, optionally wherein D is an organic acid salt of the substituted or unsubstituted C1-60 organic group; each L1 is independently a single bond or a divalent linking group, when L1 is a single bond, D may be a substituted or unsubstituted C3-30 cycloalkyl or substituted or unsubstituted C1-20 heterocycloalkyl that is optionally fused with Ar, each Ar is independently a monocyclic or polycyclic C5-60 aromatic group, each X is independently —OR30, —SR31, or —NR32R33, m is an integer of 1 to 6, each n is independently an integer of 0 to 5, provided that a sum of all n is 2 or greater, and R30 to R33 are as provided herein.

Abstract: An underlayer composition, comprising a polymer comprising a repeating unit of formula (1): wherein Ar is a monocyclic or polycyclic C5-60 aromatic group, wherein the aromatic group comprises one or more aromatic ring heteroatoms, a substituent group comprising a heteroatom, or a combination thereof; X is C or O; R1, R2; Ra and Rb are as provided herein; optionally, R1 and R2 can be taken together form a 5- to 7-membered ring; optionally, one of R11 to R13 can be taken together with R1 to form a 5- to 7-membered ring; wherein Ra and Rb optionally may be taken together to form a 5- to 7-membered ring; wherein one of Ra or Rb optionally may be taken together with R2 to form a 5- to 7-membered ring; and when X is O, Ra and Rb are absent.

Abstract: A photoresist composition comprising: a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group; a second polymer comprising a first repeating unit comprising an acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a base-soluble group, wherein the base-soluble group has a pKa of less than or equal to 12, and wherein the base-soluble group does not comprise a hydroxy-substituted aryl group; a photoacid generator; and a solvent, wherein the first polymer and the second polymer are different from each other.

Abstract: An underlayer composition, comprising a polymer comprising a repeating unit of formula (1): wherein Ar is a monocyclic or polycyclic C5-60 aromatic group, wherein the aromatic group comprises one or more aromatic ring heteroatoms, a substituent group comprising a heteroatom, or a combination thereof; X is C or O; R1, R2; Ra and Rb are as provided herein; optionally, R1 and R2 can be taken together form a 5- to 7-membered ring; optionally, one of R11 to R13 can be taken together with R1 to form a 5- to 7-membered ring; wherein Ra and Rb optionally may be taken together to form a 5- to 7-membered ring; wherein one of Ra or Rb optionally may be taken together with R2 to form a 5- to 7-membered ring; and when X is O, Ra and Rb are absent.

Abstract: Compounds having three or more alkynyl moieties substituted with an aromatic moiety having one or more of certain substituents are useful in forming underlayers useful in semiconductor manufacturing processes.

Abstract: A photoresist composition comprising a polymer, a photoacid generator, an additive comprising a tertiary carbon atom as a ring-forming atom of a lactone ring, and a solvent.

Abstract: Photoresist underlayer compositions, comprising: a curable compound comprising a group of the following formula (1): wherein: R1 is each independently H, C1-30 alkyl, or C3-30 cycloalkyl; Ar1 is an aromatic ring or a fused aromatic ring system having from 5 to 30 carbon atoms, wherein Ar1 is substituted or unsubstituted; Ar2 is an aromatic ring chosen from a 6-membered carbocyclic aromatic ring, a 5- or 6-membered heteroaromatic ring, or a fused aromatic ring system having from 5 to 30 carbon atoms, wherein Ar2 optionally comprises a fused cyclic imide moiety, a fused oxazole moiety, a fused imidazole moiety, or a fused thiazole moiety, and wherein Ar2 is substituted or unsubstituted; Y1 is a single covalent bond, or is selected from —O—, —C(O)—, —C(O)O—, —S—, —S(O)2—, —N(R2)—, —C(O)N(R2)—, —C(O)N(R2)C(O)—, —(CH2)y—, or a combination thereof, wherein R2 is H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl, C5-30 aryl, C(O)R3, or S(O)2R3, wherein R3 is chosen from H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl,

Abstract: A polymer, including a first repeating unit comprising a sulfone group, wherein the sulfone group is directly bonded to a group of formula —C(Ra)(Rb)—; and a second repeating unit comprising an acid labile group, a base-decomposable group, a polar group, or a combination thereof, wherein Ra and Rb are each independently hydrogen, halogen, substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C3-30 heterocycloalkyl, substituted or unsubstituted C2-30 alkenyl, substituted or unsubstituted C3-30 cycloalkenyl, substituted or unsubstituted C3-30 heterocycloalkenyl, substituted or unsubstituted C6-30 aryl, substituted or unsubstituted C7-30 arylalkyl, substituted or unsubstituted C7-30 alkylaryl, substituted or unsubstituted C2-30 heteroaryl, substituted or unsubstituted C3-30 heteroarylalkyl, or substituted or unsubstituted C3-30 alkylheteroaryl, provided that at least one of Ra and Rb is hydrogen.

Abstract: A polymer including a first repeating unit derived from a first monomer represented by formula (1); and a second repeating unit comprising an acid labile group, a hydroxyaryl group, a sulfonamide group, a fluoroalcohol group, or a combination thereof, wherein, in formula (1), P is a polymerizable group comprising an ethylenically unsaturated carbon-carbon double bond; L1 is a single bond or a linking group; Ar is a substituted or unsubstituted C6-30 aromatic group or a substituted or unsubstituted C4-30 heteroaromatic group; X is O or S; A is a group selected from —O—, —S—, —S(O)—, —S(O)2—, —C(O)—, —C(S)—, or —N(Ra)—; Ra is hydrogen or a non-hydrogen substituent; and R1 and R2 are each as defined herein, wherein the first repeating unit and the second repeating unit are structurally different.

Abstract: A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I): wherein, EWG, Y, R, and M+ are the same as described in the specification.

Abstract: A monomer has the structure wherein R is an organic group comprising a polymerizable carbon-carbon double bond or carbon-carbon triple bond; X and Y are independently at each occurrence hydrogen or a non-hydrogen substituent; EWG1 and EWG2 are independently at each occurrence an electron-withdrawing group; p is 0, 1, 2, 3, or 4; n is 1, 2, 3, or 4; and M+ is an organic cation. A polymer prepared from monomer is useful as a component of a photoresist composition.

Abstract: Coating compositions comprise: a curable compound comprising: a core chosen from a C6 carbocyclic aromatic ring, a C2-5 heterocyclic aromatic ring, a C9-30 fused carbocyclic aromatic ring system, a C4-30 fused heterocyclic aromatic ring system, C1-20 aliphatic, and C3-20 cycloaliphatic, and three or more substituents of formula (1) wherein at least two substituents of formula (1) are attached to the aromatic core; provided that no substituents of formula (1) are in an ortho position to each other on the same aromatic ring of the core; a polymer; and one or more solvents, wherein the total solvent content is from 50 to 99 wt % based on the coating composition.

Abstract: New monomer and polymer materials that comprise one or more Te atoms. In one aspect, tellurium-containing monomers and polymers are provided that are useful for Extreme Ultraviolet Lithography.

Abstract: Disclosed herein is a metallization method, comprising (a) providing a photoresist layer on a first surface of a substrate, wherein the photoresist layer is formed from a photoresist composition comprising: a polymer comprising acid-labile groups; a photoacid generator; an organic phosphonic acid; and a solvent; (b) pattern-wise exposing the photoresist layer to activating radiation; (c) developing the exposed photoresist layer with a basic developer to form a photoresist pattern; and (d) after forming the photoresist pattern, plating a metal on the first surface of the substrate using the photoresist pattern as a plating mask.

Abstract: A photoactive compound including an organic cation; and an anion represented by Formula (1): wherein X is an organic group; Y1 and Y2 are each independently a non-hydrogen substituent; Y1 and Y2 together optionally form a ring; Z2 is hydrogen, halogen, substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C3-30 heterocycloalkyl, substituted or unsubstituted C6-50 aryl, substituted or unsubstituted C7-50 arylalkyl, substituted or unsubstituted C7-50 alkylaryl, substituted or unsubstituted C6-50 aryloxy, substituted or unsubstituted C3-30 heteroaryl, substituted or unsubstituted C4-30 alkylheteroaryl, substituted or unsubstituted C4-30 heteroarylalkyl, or substituted or unsubstituted C3-30 heteroaryloxy; Z2 optionally further comprises one or more divalent linking groups as part of its structure; Z2 and one of Y1 or Y2 together optionally form a ring; X and Z2 together optionally form a ring; and X and one of Y1 or Y2 together optionally form a

Abstract: A photoacid generator, including an organic cation; and an anion including an anionic core, wherein the anionic core includes a cyclopentadienide group, wherein the cyclopentadienide group is substituted with an organic group including a semi-metal element, and wherein the anion is substituted with one or more electron withdrawing groups.

Abstract: New Te-salt compounds, including photoactive tellurium compounds useful for Extreme Ultraviolet Lithography.

Abstract: A compound represented by Formula (1): wherein X is a group having a valency of r; each R1 is independently an organic group comprising an acid-labile group; m is an integer greater than or equal to 1; k is an integer from 1 to 5; and r is an integer from 2 to 10, wherein the compound is non-polymeric, and wherein Ar1, L1, L2, R2, and R3 are as defined herein.

Abstract: A photoresist composition, comprising an acid-sensitive polymer comprising a repeating unit having an acid-labile group; an iodonium salt comprising an anion and a cation, the iodonium salt having Formula (1): wherein Z? is an organic anion; Ar1 is substituted or unsubstituted C4-60 heteroaryl group comprising a furan heterocycle; and R1 is substituted or unsubstituted hydrocarbon group as provided herein, wherein the cation optionally comprises an acid-labile group, wherein Ar1 and R1 are optionally connected to each other via a single bond or one or more divalent linking groups to form a ring, and wherein the iodonium salt is optionally covalently bonded through Ar1 or substituent thereof as a pendant group to a polymer, the iodonium salt is optionally covalently bonded through R1 or substituent thereof as a pendant group to a polymer, or the iodonium salt is optionally covalently bonded through Z? as a pendant group to a polymer; and a solvent.