Patents by Inventor James F. Dolejsi

James F. Dolejsi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7082016
    Abstract: A reader formed in a data transducer includes a first shield, a read gap, a second shield, a maanetic compensation layer, and a non-magnetic spacer layer. The first shield is formed of a multilayer comprised of a layer of a first material. The second shield is spaced apart from the first shield by the read gap. The magnetic compensation layer is formed in the first shield and has a coefficient of thermal expansion of less than the coefficient of thermal expansion of the first material. The non-magnetic spacer layer separates the first material layer and the compensation layer of the first shield.
    Type: Grant
    Filed: February 27, 2003
    Date of Patent: July 25, 2006
    Assignee: Seagate Technology LLC
    Inventors: Ladislav Rudolf Pust, Mark Thomas Kief, Ibro Tabakovic, James F. Dolejsi, Vee Sochivy Kong
  • Publication number: 20040012894
    Abstract: A magnetic head includes a substrate and a data transducer positioned upon the substrate. The data transducer includes a reader comprised of a top shield and a bottom shield characterized by at least one of the shields including a layer for compensating a thermally-caused expansion of the reader.
    Type: Application
    Filed: February 27, 2003
    Publication date: January 22, 2004
    Applicant: Seagate Technology LLC
    Inventors: Ladislav Rudolf Pust, Mark Thomas Kief, Ibro Tabakovic, James F. Dolejsi, Vee Sochivy Kong
  • Patent number: 6351357
    Abstract: A magneto-resistive sensor has a magneto-resistive element with an active area with an electrical resistance sensitive to changes in magnetic flux. Two hard magnets on opposing sides of the magneto-resistive element magnetically bias the magneto-resistive element. Each hard magnet includes a seed layer of a soft magnetic, electrically conductive material between two magnet layers of a hard magnetic, electrically conductive material laminated longitudinally together such that the seed layer and the magnet layers exhibit unified magnetic properties. The seed layer is preferably an amorphous material such as nitrided sendust. The laminated structure allows for a thicker magnet structure with low electrical resistance but without degradation of magnetic properties due to the increased thickness.
    Type: Grant
    Filed: September 20, 2000
    Date of Patent: February 26, 2002
    Assignee: Seagate Technology LLC
    Inventors: Song Sheng Xue, James F. Dolejsi, Patrick J. Ryan
  • Patent number: 6235342
    Abstract: An improved magnetoresistive read sensor (100) and a method of fabricating magnetoresistive read sensor (100) that eliminates film removal is disclosed. The magnetoresistive sensor (100) is formed by positioning a first mask (128) on a gap layer (104) split into three regions due to subsequent layers. A first mask (128) is positioned on the central region of the gap layer (104) and a first hard-biasing material (106) is deposited onto the outside regions of the gap layer (104). The first mask (128) is removed and a magnetoresistive element (116) is deposited onto the outside regions of the first hard-biasing material (106) and the central region of gap layer (104), thereby forming an active region (122), a first passive region (124) and a second passive region (126) of the magnetoresistive sensor (100). A spacer layer (118) is deposited onto the magnetoresistive element (116) in all three regions and a soft adjacent layer (120) is deposited onto the spacer layer (118) in all three regions.
    Type: Grant
    Filed: August 30, 2000
    Date of Patent: May 22, 2001
    Assignee: Seagate Technology LLC
    Inventors: Song Sheng Xue, Patrick J. Ryan, James F. Dolejsi
  • Patent number: 6229678
    Abstract: An improved magnetoresistive read sensor (100) and a method of fabricating magnetoresistive read sensor (100) that eliminates film removal is disclosed. The magnetoresistive sensor (100) is formed by positioning a first mask (128) on a gap layer (104) split into three regions due to subsequent layers. A first mask (128) is positioned on the central region of the gap layer (104) and a first hard-biasing material (106) is deposited onto the outside regions of the gap layer (104). The first mask (128) is removed and a magnetoresistive element (116) is deposited onto the outside regions of the first hard-biasing material (106) and the central region of gap layer (104), thereby forming an active region (122), a first passive region (124) and a second passive region (126) of the magnetoresistive sensor (100). A spacer layer (118) is deposited onto the magnetoresistive element (116) in all three regions and a soft adjacent layer (120) is deposited onto the spacer layer (118) in all three regions.
    Type: Grant
    Filed: January 7, 1999
    Date of Patent: May 8, 2001
    Assignee: Seagate Technology LLC
    Inventors: Song Sheng Xue, Patrick J. Ryan, James F. Dolejsi
  • Patent number: 6144534
    Abstract: A magneto-resistive sensor has a magneto-resistive element with an active area with an electrical resistance sensitive to changes in magnetic flux. Two hard magnets on opposing sides of the magneto-resistive element magnetically bias the magneto-resistive element. Each hard magnet includes a seed layer of a soft magnetic, electrically conductive material between two magnet layers of a hard magnetic, electrically conductive material laminated longitudinally together such that the seed layer and the magnet layers exhibit unified magnetic properties. The seed layer is preferably an amorphous material such as nitrided sendust. The laminated structure allows for a thicker magnet structure with low electrical resistance but without degradation of magnetic properties due to the increased thickness.
    Type: Grant
    Filed: December 30, 1997
    Date of Patent: November 7, 2000
    Assignee: Seagate Technology LLC
    Inventors: Song Sheng Xue, James F. Dolejsi, Patrick J. Ryan
  • Patent number: 5554265
    Abstract: An MR sensor having improved current density distribution, reduced overall resistance and a substantially planar surface is disclosed. The MR sensor includes an MR layer having first and second outer regions and an active region located between the first and second outer regions. A first permanent magnet region is formed upon the first MR layer outer region and defines a first boundary of the MR layer active region. A second permanent magnet region is formed upon the second MR layer outer region and defines a second boundary of the MR layer active region so that a gap region is positioned at least partially between the first and second permanent magnet regions. A spacer layer is formed on the MR layer active region between the first and second permanent magnet regions. A soft adjacent layer is formed in the active region and upon the spacer layer, and, in some preferred embodiments, also at least partially upon the permanent magnet region.
    Type: Grant
    Filed: April 13, 1995
    Date of Patent: September 10, 1996
    Assignee: Seagate Technology, Inc.
    Inventors: Peter I. Bonyhard, James F. Dolejsi, Charles H. Tolman, William P. Wood
  • Patent number: 5495378
    Abstract: An MR sensor having improved current density distribution, reduced overall resistance and a substantially planar surface is disclosed. The MR sensor includes an MR layer having first and second outer regions and an active region located between the first and second outer regions. A first permanent magnet region is formed upon the first MR layer outer region and defines a first boundary of the MR layer active region. A second permanent magnet region is formed upon the second MR layer outer region and defines a second boundary of the MR layer active region so that a gap region is positioned at least partially between the first and second permanent magnet regions. A spacer layer is formed on the MR layer active region between the first and second permanent magnet regions. A soft adjacent layer is formed in the active region and upon the spacer layer, and, in some preferred embodiments, also at least partially upon the permanent magnet region.
    Type: Grant
    Filed: January 30, 1995
    Date of Patent: February 27, 1996
    Assignee: Seagate Technology, Inc.
    Inventors: Peter I. Bonyhard, James F. Dolejsi, Charles H. Tolman, William P. Wood