Abstract: The bond strength between a diamond and the substrate onto which it is deposited by the chemical vaporization method is decreased to the point where the diamond can be removed from the substrate as a free standing monolithic sheet. The bond strength can be decreased by polishing the substrate, removing corners from the substrate, slow cooling of the substrate after deposition, an intermediate temperature delay in cooling or the application or formation of an intermediate layer between the diamond and the substrate. The free standing sheet of diamond can be used as a laser lens, metallized to form a mirror, or silver soldered to tungsten carbide to form a cutting tool.

Abstract: The present invention enables the diamond coating of stationary elongate objects, such as twist drills, with a continuous uniform film without any motion of the twist drill due to the unexpected superb "throwing power" of a reactor disclosed herein. The CVD diamond reactor includes a vacuum chamber, inlet for feed hydrogen/hydrocarbon mixtures, and an outlet, in conventional fashion.

Abstract: Adhesion of diamond coatings formed by chemical vapor deposition to substrates, particularly molybdenum substrates, is improved by employing an auxiliary substrate comprising elemental or chemically combined silicon, from which a silane is believed to diffuse to the principal substrate, where it is reduced to silicon and deposits thereon.

Abstract: An improved method of producing articles by chemical vapor deposition and articles made therefrom. The method comprises machining an appropriate shape on a suitable substrate, positioning an insert within the shape, depositing a support member material on the shape and the insert to produce a support member, separating the support member from the substrate, chemically vapor depositing an article material on the support member and etching away the support member to produce a free standing article, such as a funnel shaped diamond water-jet mixing tube.

Abstract: A method is provided for making substantially transparent polycrystalline diamond film having a thickness greater than 50 microns which can be used in glazing applications and as a heat sink in microelectric applications. A mixture of hydrogen and methane is conveyed into a heated filament reacting zone which is adjacent to an appropriate substrate, such as a molybdenum substrate to produce non-adherent polycrystalline substantially transparent diamond film.

Abstract: The present invention enables the diamond coating of stationary elongate objects, such as twist drills, with a continuous uniform film without any motion of the twist drill due to the unexpected superb "throwing power" of a reactor disclosed herein. The CVD diamond reactor includes a vacuum chamber, inlet for feed hydrogen/hydrocarbon mixtures, and an outlet, in conventional fashion.

Abstract: The present invention is directed to a twist drill which is coated with a layer of CVD diamond and which has slots in its head which are filled with CVD diamond. The invention twist drill is made by forming slots in the head of the twist drill and then subjecting the slotted twist drill to a CVD diamond deposition process for coating said twist drill with a layer of CVD diamond and for filling said slots with CVD diamond. The performance of CVD diamond-coated twist drills does not depend on retaining the diamond film over most of the areas of the drill; but, rather, drill performance is dependent upon retaining a layer of diamond on the cutting edge of the drill. The diamond-filled slots in the head of the twist drill function as wear stops and additional cutting edges as the surrounding drill material is worn away during use.

Abstract: The present invention is directed towards the production of a single crystal semiconductor device mounted in intimate contact with a polycrystalline CVD diamond substrate which allows the high heat conductivity of diamond to keep the device cool. This device is made by a method comprising the steps of placing in a reaction chamber, a single crystal of silicon heated to an elevated CVD diamond-forming temperature. A hydrocarbon/hydrogen gaseous mixture is provided within the chamber and is at least partially decomposed to form a polycrystalline CVD diamond layer on said silicon. During the deposition/growth phase, an intermediate layer of single crystal SiC has been found to form between the single crystal of silicon and the polycrystalline CVD diamond layer. In the next step of the process, the silicon is etched or removed to reveal the single crystal SiC supported by the polycrystalline CVD diamond layer. Finally, a semiconductor layer (e.g.

Abstract: Diamond is deposited by chemical vapor deposition on two parallel substrates, by means of a plurality of filaments between said substrates. The substrates and filaments are in vertical configuration and the filaments are linear and spring-tensioned to compensate for thermal expansion and expansion caused by filament carburization. The apparatus includes at least one and preferably two temperature controlling means, usually heat sinks, to maintain substrate temperature in the range of 900.degree.-1000.degree. C., for optimum rate of diamond deposition.

Abstract: A plural substrate CVD apparatus for diamond crystal production utilizes spaced apart vertical, parallel, planar substrate panels with an electrical (direct current, D.C.) resistance filament heater therebetween. A hydrogen-hydrocarbon gas mixture flows between panels to come into contact with the heater and the panels to cause diamond crystal nucleation and growth on the substrate panels. The apparatus includes means for maintaining the spaced relationship of the heater from the substrate surfaces, comprising a rod member attached to one end of the heater and tensioned by a cable passing over a pulley member and attached to a weight.

Abstract: Diamond is deposited by chemical vapor deposition on two parallel substrates, by means of a plurality of filaments between the substrates. The substrates and filaments are in vertical configuration and the filaments are prestressed to curve in a single plane parallel to the substrates, to allow for thermal expansion and expansion caused by filament carburization. The apparatus includes at least one and preferably two heat sinks to maintain substrate temperatures in the range of 900.degree.-1000.degree. C., for optimum rate of diamond deposition.