Patents by Inventor James F. Gibbons
James F. Gibbons has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9269633Abstract: Semiconductor device performance is improved via a gate structure having a tunable effective workfunction and reduced gate depletion effects. According to an example embodiment, the design threshold voltage of a semiconductor device is adjusted in a manner that includes providing a gate having a workfunction that enables operation of the semiconductor device at a selected voltage. The gate is formed having two different conductive materials with different electric workfunctions that both significantly contribute to the overall workfunction of the gate. The relative composition, thickness, and arrangement of each of the two conductive materials is selected to attain a gate electrode workfunction that is different than the workfunctions of each of the two layers and that sets the threshold voltage of the semiconductor device. The adjustability of the effective workfunction of the gate electrode can be applied to a variety of semiconductor devices.Type: GrantFiled: May 23, 2014Date of Patent: February 23, 2016Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Steven Hung, Judy L. Hoyt, James F. Gibbons
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Publication number: 20140329378Abstract: Semiconductor device performance is improved via a gate structure having a tunable effective workfunction and reduced gate depletion effects. According to an example embodiment, the design threshold voltage of a semiconductor device is adjusted in a manner that includes providing a gate having a workfunction that enables operation of the semiconductor device at a selected voltage. The gate is formed having two different conductive materials with different electric workfunctions that both significantly contribute to the overall workfunction of the gate. The relative composition, thickness, and arrangement of each of the two conductive materials is selected to attain a gate electrode workfunction that is different than the workfunctions of each of the two layers and that sets the threshold voltage of the semiconductor device. The adjustability of the effective workfunction of the gate electrode can be applied to a variety of semiconductor devices.Type: ApplicationFiled: May 23, 2014Publication date: November 6, 2014Applicant: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Steven Hung, Judy L. Hoyt, James F. Gibbons
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Patent number: 7867859Abstract: Semiconductor device performance is improved via a gate structure having a tunable effective workfunction and reduced gate depletion effects. According to an example embodiment, the design threshold voltage of a semiconductor device is adjusted in a manner that includes providing a gate having a workfunction that enables operation of the semiconductor device at a selected voltage. The gate is formed having two different conductive materials with different electric workfunctions that both significantly contribute to the overall workfunction of the gate. The relative composition, thickness, and arrangement of each of the two conductive materials is selected to attain a gate electrode workfunction that is different than the workfunctions of each of the two layers and that sets the threshold voltage of the semiconductor device. The adjustability of the effective workfunction of the gate electrode can be applied to a variety of semiconductor devices.Type: GrantFiled: June 17, 2008Date of Patent: January 11, 2011Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Steven Hung, Judy L. Hoyt, James F. Gibbons
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Publication number: 20040113211Abstract: Semiconductor device (100) performance is improved via a gate structure (120) having a tunable effective workfunction and reduced gate depletion effects. According to an example embodiment of the present invention, the design threshold voltage of a semiconductor device (100) is adjusted in a manner that includes providing a gate having a workfunction that enables operation of the semiconductor device (100) at a selected voltage. The gate is formed having two different conductive materials (130, 135) with different electric workfunctions that both significantly contribute to the overall workfunction of the gate. The relative composition, thickness, and arrangement of each of the two conductive material is selected to attain a gate electrode workfunction that is different than the workfunctions of each of the two layers and that sets the threshold voltage of the semiconductor device (100). In addition, by selecting the order of the layers, carrier depletion in the gate electrode can be avoided.Type: ApplicationFiled: January 16, 2004Publication date: June 17, 2004Inventors: Steven Hung, Judy L Hoyt, James F Gibbons
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Patent number: 6434327Abstract: A rapid thermal heating apparatus including a plurality of radiant energy sources and reflectors associated with the radiant energy sources. The radiant energy sources and reflectors direct radiation through a window of an envacuable chamber to radiate regions of a substrate in the chamber with a pattern of radiation intensity.Type: GrantFiled: July 28, 1995Date of Patent: August 13, 2002Assignees: Applied Materials, Inc., 3-Squared Semiconductor Corp.Inventors: Christian M. Gronet, James F. Gibbons
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Patent number: 6122439Abstract: A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.Type: GrantFiled: September 3, 1997Date of Patent: September 19, 2000Assignee: Applied Materials, Inc.Inventors: Christian M. Gronet, James F. Gibbons
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Patent number: 6016383Abstract: A rapid thermal heating apparatus including an infrared camera located outside an evacuable chamber to sense infrared radiation emitted from different regions of a substrate.Type: GrantFiled: February 27, 1998Date of Patent: January 18, 2000Assignee: Applied Materials, Inc.Inventors: Christian M. Gronet, James F. Gibbons
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Patent number: 5840125Abstract: A rapid thermal heating apparatus including a substrate support and a bearing assembly in a processing chamber. The substrate support is mounted on the bearing assembly so that it may be rotated. A rotatable drive ring is located external to the processing chamber. The drive ring provides a force to couple the bearing assembly to the drive ring without the use of a vacuum seal so that rotation of the drive ring causes the substrate support to rotate.Type: GrantFiled: July 28, 1995Date of Patent: November 24, 1998Assignee: Applied Materials, Inc.Inventors: Christian M. Gronet, James F. Gibbons
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Patent number: 5790751Abstract: A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.Type: GrantFiled: January 13, 1997Date of Patent: August 4, 1998Assignee: Applied Materials, Inc.Inventors: Christian M. Gronet, James F. Gibbons
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Patent number: 5767486Abstract: A rapid thermal heating apparatus including an evacuable chamber having a window, a plurality of radiant energy sources and reflectors associated with the radiant energy sources. The radiant energy sources are disposed outside of the chamber and positioned adjacent to the window. They have a central longitudinal axis that extends in a substantially perpendicular direction relative to the window. The reflectors direct radiant energy through the window to radiate predetermined regions of a backside surface of a substrate in the chamber. The reflectors extend along a major portion of the longitudinal axis of the radiant energy sources. The substrate sits on a support in the chamber, and a source of processing gas, including a gas inlet manifold, is provided for passing processing gas to a frontside surface of the substrate.Type: GrantFiled: January 13, 1997Date of Patent: June 16, 1998Assignee: Applied Materials, Inc.Inventors: Christian M. Gronet, James F. Gibbons
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Patent number: 5743643Abstract: A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.Type: GrantFiled: October 16, 1996Date of Patent: April 28, 1998Assignee: Applied Materials, Inc.Inventors: Christian M. Gronet, James F. Gibbons
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Patent number: 5708755Abstract: A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.Type: GrantFiled: April 3, 1996Date of Patent: January 13, 1998Assignee: Applied Materials, Inc.Inventors: Christian M. Gronet, James F. Gibbons
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Patent number: 5689614Abstract: A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.Type: GrantFiled: July 31, 1995Date of Patent: November 18, 1997Assignee: Applied Materials, Inc.Inventors: Christian M. Gronet, James F. Gibbons
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Patent number: 5683173Abstract: A rapid thermal heating apparatus including an evacuable chamber, a plurality of radiant energy sources, reflectors associated with the radiant energy sources, and a cooling passageway adapted to include a coolant to cool the reflectors.Type: GrantFiled: July 28, 1995Date of Patent: November 4, 1997Assignee: Applied Materials, Inc.Inventors: Christian M. Gronet, James F. Gibbons
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Patent number: 5487127Abstract: A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.Type: GrantFiled: October 5, 1993Date of Patent: January 23, 1996Assignee: Applied Materials, Inc.Inventors: Christian M. Gronet, James F. Gibbons
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Patent number: 5317492Abstract: A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.Type: GrantFiled: May 13, 1992Date of Patent: May 31, 1994Assignee: Applied Materials, Inc.Inventors: Christian M. Gronet, James F. Gibbons
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Patent number: 5256550Abstract: The present invention comprises a method of fabricating devices and circuits employing at least one heteroepitaxial layer under strain. The thickness of the heteroepitaxial layer is more than two times the calculated equilibrium critical thickness for an uncapped heteroepitaxial layer upon a crystalline substrate, based on previously known equilibrium theory for the uncapped layer. Subsequent to growth of the heteroepitaxial layer, the structure is processed at temperatures higher than the growth temperature of the heteroepitaxial layer.The strained heteroepitaxial layer (second layer) is epitaxially grown upon the surface of a first, underlaying crystalline layer, creating a heterojunction. Subsequently a third crystalline layer is deposited or grown upon the major exposed surface of the second, strained heteroepitaxial layer. The preferred manner of growth of the third crystalline layer is epitaxial growth.Type: GrantFiled: June 12, 1991Date of Patent: October 26, 1993Assignee: Hewlett-Packard CompanyInventors: Stephen Laderman, Martin Scott, Theodore I. Kamins, Judy L. Hoyt, Clifford A. King, James F. Gibbons, David B. Noble
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Patent number: 5202284Abstract: Several methods are disclosed for minimizing the number of defects or misfit locations in a SiGe layer selectively or non-selectively deposited on a partially oxide masked Si substrate.Type: GrantFiled: December 1, 1989Date of Patent: April 13, 1993Assignee: Hewlett-Packard CompanyInventors: Theodore I. Kamins, David B. Noble, Judy L. Hoyt, James F. Gibbons, Martin P. Scott
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Patent number: 5155336Abstract: A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.Type: GrantFiled: October 24, 1991Date of Patent: October 13, 1992Assignee: Applied Materials, Inc.Inventors: Christian M. Gronet, James F. Gibbons
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Patent number: 5084411Abstract: Improved devices with silicon to SiGe alloy heterojunctions are provided for in accordance with the following discoveries. X-ray topography and transmission electron microscopy were used to quantify misfit-dislocation spacings in as-grown Si.sub.1-x Ge.sub.x films formed by Limited Reaction Processing (LRP), which is a chemical vapor deposition technique. These analysis techniques were also used to study dislocation formation during annealing of material grown by both LRP and by molecular beam epitaxy (MBE). The thickness at which misfit dislocations first appear in as-grown material was similar for both growth techniques. The thermal stability of capped and uncapped films was also investigated after rapid thermal annealing in the range of 625.degree. to 1000.degree. C. Significantly fewer misfit dislocations were observed in samples containing an epitaxial silicon cap.Type: GrantFiled: November 29, 1988Date of Patent: January 28, 1992Assignee: Hewlett-Packard CompanyInventors: Stephen Laderman, Martin Scott, Theodore I. Kamins, Judy L. Hoyt, Clifford A. King, James F. Gibbons, David B. Noble