Abstract: A direct vapor deposition (DVD) method and apparatus for applying coating(s) on substrate(s), including: presenting at least one of the substrates to a chamber, presenting at least one evaporant source (125) in crucible (110) to the chamber; presenting at least one carrier gas stream (105) to the chamber using a ring-shaped (133) converging/diverging nozzle (130); impinging at least one evaporant source with at least one electron beam in the chamber to generate an evaporated vapor flux in a main direction respective for any of the evaporant sources impinged by the electron beam; and guiding at least one of the generated evaporated vapor flux by at least one carrier gas stream from the ring shaped gap (132), which is essentially parallel to the main direction and substantially surrounds the evaporated flux. The evaporated vapor flux at least partially coats at least one of the substrates.

Abstract: Plasma deposition apparatus (1) and method that allows metal or nonmetal vapor (6) to be generated by electron-beam evaporation, guides that vapor using a noble gas stream (containing reactive gases in cases of reactive evaporation), ionizes the dense directed gas and vapor stream at working pressures above about 0.0001 mbar using a hollow cathode plasma arc discharge (11), and conveys the ionized vapor and/or gas stream towards the substrate (4) for impact on the surface at energies varying from thermal levels (as low as about 0.05 eV) up to about 300 eV.

Abstract: A direct vapor deposition (DVD) method and apparatus for applying coating(s) on substrate(s), including: presenting at least one of the substrates to a chamber, presenting at least one evaporant source (125) in crucible (110) to the chamber; presenting at least one carrier gas stream (105) to the chamber using a ring-shaped (133) converging/diverging nozzle (130); impinging at least one evaporant source with at least one electron beam in the chamber to generate an evaporated vapor flux in a main direction respective for any of the evaporant sources impinged by the electron beam; and guiding at least one of the generated evaporated vapor flux by at least one carrier gas stream from the ring shaped gap (132), which is essentially parallel to the main direction and substantially surrounds A the evaporated flux. The evaporated vapor flux at least partially coats at least one of the substrates.

Abstract: Plasma deposition apparatus (1) and method that allows metal or nonmetal vapor (6) to be generated by electron-beam evaporation, guides that vapor using a noble gas stream (containing reactive gases in cases of reactive evaporation), ionizes the dense directed gas and vapor stream at working pressures above about 0.0001 mbar using a hollow cathode plasma arc discharge (11), and conveys the ionized vapor and/or gas stream towards the substrate (4) for impact on the surface at energies varying from thermal levels (as low as about 0.05 eV) up to about 300 eV.

Abstract: A process for vapor depositing an evaporant onto a substrate is provided which involves:presenting the substrate to a deposition chamber, wherein the deposition chamber has an operating pressure of from 0.001 Torr to atmospheric pressure and has coupled thereto a carrier gas stream generator and an electron beam gun capable of providing an electron beam at the operating pressure and contains an evaporant source;impinging the evaporant source with the electron beam to generate the evaporant;entraining the evaporant in the carrier gas stream; andcoating the substrate with the carrier gas stream which contains the entrained evaporant, and an apparatus for performing the process.

Abstract: A process for vapor depositing an evaporant onto a substrate is provided which involves:presenting the substrate to a deposition chamber, wherein the deposition chamber has an operating pressure of from 0.001 Torr to atmospheric pressure and has coupled thereto a carrier gas stream generator and an electron beam gun capable of providing an electron beam at the operating pressure and contains an evaporant source;impinging the evaporant source with the electron beam to generate the evaporant;entraining the evaporant in the carrier gas stream; andcoating the substrate with the carrier gas stream which contains the entrained evaporant, and an apparatus for performing the process.