Abstract: The invention is a novel class of materials made by combining the best qualities of both lead iron tantalate (PFT) and lead iron titanate (PZT) to synthesize (PbZr0.53Ti0.47O3)(1-x)—(PbFe0.5Ta0.5O3)x (PZTFT) (0.1?x?0.9) compositions that have multiferroic (ferroelectric and ferromagnetic) and magnetoelectric properties.

Abstract: A process for filling or lining the pores of a porous silicon, silica or alumina substrate with a material which exhibits voltage-dependent index of refraction n is provided comprising providing precursors for the deposited material as a precursor solution, forming a fine mist of droplets of precursor solution and applying the droplets to the porous substrate. The invention provides for the first time porous silicon, silica and alumina substrates having a fill fraction of at least 60%. Fill fractions of close to l00% can be achieved. When provided with top and bottom electrodes, filled porous silicon, silica and alumina wafers can be used as voltage-dependent photonic devices. The same process can be used for lining trenches in the surface of a silicon substrate, for instance for use in production of microelectronic devices such as random access memories.

Abstract: A nanostructure comprising a first structure comprising conductive material, which is attached to a second structure comprising one or more portions of conductive material separated by insulator material, which is attached to a third structure comprising a material in which a change can be effected. The third structure may comprise a dielectric or ferroelectric material, and the change effected in the material may be polarization of the material. The nanostructure may comprise one or more nanocapacitors, each of which comprises a part of the third structure in which a change comprising polarization may be effected. The nanocapacitors may be used to store data.

Abstract: The invention provides a method for the production of a photonic device comprising providing a substrate, forming in the substrate substantially straight pores, lining or filling the pores with a material having voltage-dependent index of refraction, and removing part but not all of the substrate materials so that an array remains of tubes or rods of material having voltage-dependent index of refraction. In a variant of the method the deposited material is piezoelectric and the substrate is completely removed, resulting in piezoelectric tubes or rods of small diameter, generally below 10 ?m.

Abstract: The present invention relates to a tuneable fringe effect capacitor for conducting radio frequency energy. The capacitor includes a thin film of ferroelectric material, a pair of films of a conductive material deposited on the ferroelectric film with a gap between the films, and a substrate for the ferroelectric material and the conductive films. The capacitance value across the gap is varied by applying a voltage to the ferroelectric material and thereby altering the dielectric constant of the ferroelectric material.