Patents by Inventor James G. Couillard
James G. Couillard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7838935Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.Type: GrantFiled: December 4, 2008Date of Patent: November 23, 2010Assignee: Corning IncorporatedInventors: James G. Couillard, Kishor P. Gadkaree, Joseph F. Mach
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Publication number: 20100213582Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.Type: ApplicationFiled: December 4, 2008Publication date: August 26, 2010Inventors: James G. Couillard, Kishor P. Gadkaree, Joseph F. Mach
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Patent number: 7605053Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer and the support substrate is preferably at least 8 joules/meter2. The semiconductor layer can include a hybrid region in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.Type: GrantFiled: April 9, 2008Date of Patent: October 20, 2009Assignee: Corning IncorporatedInventors: James G. Couillard, Kishor P. Gadkaree, Joseph F. Mach
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Patent number: 7527541Abstract: An OLED structure includes a substantially flexible substrate, and at least one barrier layer disposed between the substrate and the OLED structure. The barrier layer substantially prevents contaminants from permeating a layer of organic material or the OLED structure. The barrier layer includes a glass layer that has certain components added or removed to improve its flexibility. The OLED structure may also include a substantially flexible substrate and at least one barrier layer disposed between the substrate and the OLED structure. The barrier layer includes a strain relief material. The strain relief material advantageously has at least one axis of orientation. Photonic or electronic components, or both could be substituted for the OLED.Type: GrantFiled: November 14, 2006Date of Patent: May 5, 2009Assignee: Corning IncorporatedInventor: James G. Couillard
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Publication number: 20090085176Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.Type: ApplicationFiled: December 4, 2008Publication date: April 2, 2009Inventors: James G. Couillard, Kishor P. Gadkaree, Joseph F. Mach
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Patent number: 7476940Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.Type: GrantFiled: January 5, 2007Date of Patent: January 13, 2009Assignee: Corning IncorporatedInventors: James G. Couillard, Kishor P. Gadkaree, Joseph F. Mach
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Publication number: 20080224254Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer and the support substrate is preferably at least 8 joules/meter2. The semiconductor layer can include a hybrid region in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.Type: ApplicationFiled: April 9, 2008Publication date: September 18, 2008Applicant: Corning IncorporatedInventors: James G. Couillard, Kishor P. Gadkaree, Joseph F. Mach
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Patent number: 7282738Abstract: A method of forming crystalline or polycrystalline layers includes providing a substrate and a patterning over the substrate. The method also includes providing nucleation material and forming the crystalline layer over the nucleation material. The crystalline material disposed over the substrate may be monocrystalline or polycrystalline.Type: GrantFiled: May 21, 2004Date of Patent: October 16, 2007Assignee: Corning IncorporatedInventors: James G. Couillard, Kishor P. Gadkaree, Youchun Shi
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Patent number: 7199518Abstract: An OLED structure includes a substantially flexible substrate, and at least one barrier layer disposed between the substrate and the OLED structure. The barrier layer substantially prevents contaminants from permeating a layer of organic material or the OLED structure. The barrier layer includes a glass layer that has certain components added or removed to improve its flexibility. The OLED structure may also include a substantially flexible substrate and at least one barrier layer disposed between the substrate and the OLED structure. The barrier layer includes a strain relief material. The strain relief material advantageously has at least one axis of orientation. Photonic or electronic components, or both could be substituted for the OLED.Type: GrantFiled: October 21, 2003Date of Patent: April 3, 2007Assignee: Corning IncorporatedInventor: James G. Couillard
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Patent number: 7192844Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300–1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.Type: GrantFiled: July 8, 2005Date of Patent: March 20, 2007Assignee: Corning IncorporatedInventors: James G. Couillard, Kishor P. Gadkaree, Joseph F. Mach
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Patent number: 7176528Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300–1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.Type: GrantFiled: February 12, 2004Date of Patent: February 13, 2007Assignee: Corning IncorporatedInventors: James G. Couillard, Kishor P. Gadkaree, Joseph F. Mach
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Publication number: 20040229444Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 &OHgr;-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.Type: ApplicationFiled: February 12, 2004Publication date: November 18, 2004Inventors: James G. Couillard, Kishor P. Gadkaree, Joseph F. Mach
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Publication number: 20030012545Abstract: A variable optical attenuator includes a pair of lensed fibers normally having their optical axes aligned and an actuator operable to displace at least one of the pair of lensed fibers such that the optical axes are misaligned and an intensity of an optical signal passing between the lensed fibers is altered.Type: ApplicationFiled: April 25, 2002Publication date: January 16, 2003Inventors: Robert A. Bellman, James G. Couillard, Donald M. Trotter, Ljerka Ukrainczyk
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Patent number: 6360036Abstract: An optical switch on a planar optical circuit substrate includes a cantilevered arm having a control element selectively movable in a direction into the plane of the substrate into a waveguide slot of the substrate for switching optical signals carried by the waveguide. The arm can be actuated by thermal or piezoelectric actuators to deflect between a rest position allowing signal information from a waveguide to continue along the waveguide and a second position with the control element of the cantilevered arm extending into the slot for selectively blocking or changing the direction of the incoming signal. In an alternative embodiment of the invention, a second arm is provided which moves laterally and can be selectively actuated in sequence with the first cantilevered arm for overlying and latching the switching arm in the second or light controlling position, such that the MEMS switch can remain in an active state without further application of a control signal thereto.Type: GrantFiled: January 14, 2000Date of Patent: March 19, 2002Assignee: Corning IncorporatedInventor: James G. Couillard