Patents by Inventor James G. Heard

James G. Heard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma etching using a bilayer mask
    Patent number: 5091047
    Abstract: A bilayer mask is utilized for etching a primary layer, which may be either an aluminum metallization layer or a dielectric layer. The bilayer mask includes both a thin resist layer and a metal imaging layer. The thin resist layer provides for high resolution patterning of the metal imaging layer. The metal imaging layer, in turn, provides for durability to withstand subsequent plasma etching of the underlying primary layer.
    Type: Grant
    Filed: July 22, 1991
    Date of Patent: February 25, 1992
    Assignee: National Semiconductor Corp.
    Inventors: James M. Cleeves, James G. Heard, Zoilo C. H. Tan
  • Plasma etching using a bilayer mask
    Patent number: 5045150
    Abstract: A bilayer mask is utilized for etching a primary layer, which may be either an aluminum metallization layer or a dielectric layer. The bilayer mask includes both a thin resist layer and a metal imaging layer. The thin resist layer provides for high resolution patterning of the metal imaging layer. The metal imaging layer, in turn, provides for durability to withstand subsequent plasma etching of the underlying primary layer.
    Type: Grant
    Filed: June 17, 1988
    Date of Patent: September 3, 1991
    Assignee: National Semiconductor Corp.
    Inventors: James M. Cleeves, James G. Heard, Zoilo C. H. Tan
  • Process for making a self-aligned silicide shunt
    Patent number: 4883772
    Abstract: A silicide base shunt 50 and method of fabricating it are disclosed for a bipolar transistor. The base shunt 50 is fabricated using the first layer metal 36, 39 as a mask to etch silicon dioxide 27 surrounding the emitter 34 to thereby expose the underlying silicon epitaxial layer 24. Nickel or copper are then deposited onto the silicon 24 to form a region of silicide 50 extending from a base contact 36 to closely proximate the emitter 34, thereby minimizing the resistance of the extrinsic base region 24 of the transistor.
    Type: Grant
    Filed: September 6, 1988
    Date of Patent: November 28, 1989
    Assignee: National Semiconductor Corporation
    Inventors: James M. Cleeves, James G. Heard