Abstract: Embodiments of the invention contemplate the formation of a solar cell module comprising an array of interconnected solar cells that are formed using an automated processing sequence that is used to form a novel planar solar cell interconnect structure. In one embodiment, the module structure described herein includes a patterned adhesive layer that is disposed on a backsheet to receive and bond a plurality of conducting ribbons thereon. The substantially planar bonded conducting ribbons are then used to interconnect an array of solar cell devices to form a solar cell module that can be electrically connected to one or more external components, such as an electrical power grid, satellites, electronic devices or other similar power requiring units. Embodiments of the invention may further provide a roll-to-roll system that is configured to serially form a plurality of solar cell modules over different portions of a backsheet material received from a roll of backsheet material.

Abstract: The present invention comprises methods for manufacturing solar cell modules having improved fault tolerance and the ability to maximize module power output in response to non-optimal operation of one or more solar cells in the module. To improve the fault tolerance, the individual solar cells may each have a bypass diode coupled thereto to that when a single solar cell faults, only the faulted solar cell is affected. In one embodiment, a transistor may be used to improve the fault tolerance of a solar cell module.

Abstract: Methods of manufacturing back-contacted p-type semiconductor substrate solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side, and back-contacted solar cells with integral n-type conductive vias, such as made by a gradient-driven solute transport process.

Abstract: Back contact solar cells including rear surface structures and methods for making same. The rear surface is doped to form an n+ emitter and then coated with a dielectric layer. Small regions are scribed in the rear surface and p-type contacts are then formed in the regions. Large conductive grid areas overlay the dielectric layer. The methods provide for increasing efficiency by minimizing p-type contact areas and maximizing n-type doped regions on the rear surface of a p-type substrate.

Abstract: A buried-contact solar cell, in-process buried-contact solar cell components and methods for making buried contact solar cells wherein a self-doping contact material is placed in a plurality of buried-contact surface grooves. By combining groove doping and metallization steps, the resulting solar cell is simpler and more economical to manufacture.

Abstract: Methods for fabrication of emitter wrap through (EWT) back-contact solar cells and cells made by such methods. Certain methods provide for higher concentration of dopant in conductive vias compared to the average dopant concentration on front or rear surfaces, and provided increased efficiency. Certain methods provide for selective doping to holes for forming conductive vias by use of printed dopant pastes. Other methods provide for use of spin-on glass substrates including dopant.

Abstract: Back contact solar cells including rear surface structures and methods for making same. The rear surface has small contact areas through at least one dielectric layer, including but not limited to a passivation layer, a nitride layer, a diffusion barrier, and/or a metallization barrier. The dielectric layer is preferably screen printed. Large grid areas overlay the dielectric layer. The methods provide for increasing efficiency by minimizing p-type contact areas and maximizing n-type doped regions on the rear surface of a p-type substrate.