Abstract: A glass laminate structure comprising an external glass sheet and an internal glass sheet wherein one or both of the glass sheets comprises SiO2+B2O3+Al2O3?86.5 mol. %. and R2O—RO—Al2O3<about 5 mol. %. Exemplary glass sheet can comprise between about 69-80 mol. % SiO2, between about 6-12 mol. % Al2O3, between about 2-10 mol. % B2O3, between about 0-5 mol. % ZrO2, Li2O, MgO, ZnO and P2O5, between about 6-15 mol. % Na2O, between about 0-3 mol. % K2O and CaO, and between about 0-2 mol. % SnO2 to provide a mechanically robust and environmentally durable structure.

Abstract: Disclosed herein are sealed devices comprising at least one cavity containing at least one quantum dot or at least one laser diode are also disclosed herein. The sealed devices can comprise a glass substrate sealed to an inorganic substrate, optionally via a sealing layer, the seal extending around the at least one cavity. Display and optical devices comprising such sealed devices are also disclosed herein, as well as methods for making such sealed devices.

Abstract: Disclosed herein are methods for making asymmetric laminate structures and methods for reducing bow in asymmetric laminate structures, the methods comprising differentially heating the laminate structures during lamination or differentially cooling the laminate structures after lamination. Also disclosed herein are methods for reducing bow in asymmetric laminate structures, the methods comprising subjecting at least one substrate in the laminate structure to asymmetric tempering or annealing prior to lamination. Further disclosed herein are laminate structures made according to such methods.

Abstract: Embodiments are directed to glass-ceramic substrates with a III-V semiconductor layer, for example, a GaN layer that can be used in LED lighting devices. The glass-ceramics material is in the anorthite-rutile (CaAl2Si2O8+TiO2) family or in the cordierite-enstatite (SiO2—Al2O3—MgO—TiO2) family.

Abstract: A laminate structure having a first glass layer, a second glass layer, and at least one polymer interlayer intermediate the first and second glass layers. The first glass layer is comprised of a thin, chemically strengthened glass having a surface compressive stress of between about 250 MPa and about 350 MPa and a depth of layer (DOL) of compressive stress greater than about 60 ?m. The second glass layer can also be comprised of a thin, chemically strengthened glass having a surface compressive stress of between about 250 MPa and about 350 MPa and a depth of layer (DOL) of compressive stress greater than about 60 ?m.

Abstract: A method of providing locally annealed regions for a glass article. The method includes providing a strengthened glass article having a first surface compressive stress and a first depth of layer of compressive stress, annealing the strengthened glass article to achieve a second surface compressive stress and a second depth of layer of compressive stress, and masking a portion of the glass article during the annealing step to achieve a third surface compressive stress and a third depth of layer of compressive stress in the masked portion. The glass article can be a laminate structure comprising a first glass layer, a second glass layer, and at least one polymer interlayer intermediate the first and second glass layers. The glass layers can include differing surface compressive stresses depths of layer of compressive stress.

Abstract: A laminate structure having a first glass layer, a second glass layer, and at least one polymer interlayer intermediate the first and second glass layers. The first glass layer is comprised of a thin, chemically strengthened glass having a surface compressive stress of between about 250 MPa and about 350 MPa and a depth of layer (DOL) of compressive stress greater than about 60 ?m. The second glass layer can also be comprised of a thin, chemically strengthened glass having a surface compressive stress of between about 250 MPa and about 350 MPa and a depth of layer (DOL) of compressive stress greater than about 60 ?m.

Abstract: Disclosed herein are methods for making asymmetric laminate structures and methods for reducing bow in asymmetric laminate structures, the methods comprising subjecting the laminate structures to at least one thermal cycle comprising cooling the laminate structures to a first temperature near or below room temperature and heating the laminate structures to a second temperature near or below the lamination temperature. Also disclosed herein are laminate structures made according to such methods.

Abstract: A glass laminate structure comprising an external glass sheet and an internal glass sheet wherein one or both of the glass sheets comprises SiO2+B2O3+Al2O3?86.5 mol. %. and R2O—RO—Al2O3< about 5 mol. %. Exemplary glass sheet can comprise between about 69-80 mol. % SiO2, between about 6-12 mol. % Al2O3, between about 2-10 mol. % B2O3, between about 0-5 mol. % ZrO2, Li2O, MgO, ZnO and P2O5, between about 6-15 mol. % Na2O, between about 0-3 mol. % K2O and CaO, and between about 0-2 mol. % SnO2 to provide a mechanically robust and environmentally durable structure.

Abstract: Methods and apparatus provide for a structure, including: a first glass material layer; and a second material layer bonded to the first glass material layer via bonding material, where the bonding material is formed from one of glass frit material, ceramic frit material, glass ceramic frit material, and metal paste, which has been melted and cured.

Abstract: Methods and apparatus provide for performing an ion exchange process by immersing a glass sheet into a molten salt bath at one or more first temperatures for a first period of time such that ions within the glass sheet proximate to a surface thereof are exchanged for larger ions from the molten salt bath, thereby producing: (i) an initial compressive stress (iCS) at the surface of the glass sheet, (ii) an initial depth of compressive layer (iDOL) into the glass sheet, and (iii) an initial central tension (iCT) within the glass sheet; and annealing the glass sheet, after the ion exchange process has been completed, by elevating the glass sheet to one or more second temperatures for a second period of time such that at least one of the initial compressive stress (iCS), the initial depth of compressive layer (iDOL), and the initial central tension (iCT) are modified.

Abstract: A laminate structure having a first glass layer, a second glass layer, and at least one polymer interlayer intermediate the first and second glass layers. The first glass layer is comprised of a thin, chemically strengthened glass having a surface compressive stress of between about 250 MPa and about 350 MPa and a depth of layer (DOL) of compressive stress greater than about 60 ?m. The second glass layer can also be comprised of a thin, chemically strengthened glass having a surface compressive stress of between about 250 MPa and about 350 MPa and a depth of layer (DOL) of compressive stress greater than about 60 ?m.

Abstract: Embodiments are directed to glass-ceramic substrates with a III-V semiconductor layer, for example, a GaN layer that can be used in LED lighting devices. The glass-ceramics material is in the anorthite-rutile (CaAl2Si2O8+TiO2) family or in the cordierite-enstatite (SiO2—Al2O3—MgO—TiO2) family.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

Abstract: A surface plasmon resonance sensor system including a high refractive index prism, a sensor chip, a light source having multiple wavelengths over a broad range of wavelengths, optical lenses, a photodetector, a data acquisition unit, and as defined herein. The sensor chip can include, for example, a thin layer of silicon and gold on one face of a transparent substrate and the prism adjacent to the opposite face of the transparent substrate. Such an arrangement provides variable penetration depths up to about 1.5 micrometers with a dynamic range for sensing index of refraction changes in a sample that are several times greater than that of a conventional SPR sensor. The disclosure provides methods for using the surface plasmon resonance sensor system for cell assay or chemical assay related applications.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

Abstract: Methods and apparatus for producing a semiconductor on glass (SOG) structure include: bringing a first surface of a glass substrate into direct or indirect contact with a semiconductor wafer; heating at least one of the glass substrate and the semiconductor wafer such that a second surface of the glass substrate, opposite to the first surface thereof, is at a lower temperature than the first surface; applying a voltage potential across the glass substrate and the semiconductor wafer; and maintaining the contact, heating and voltage to induce an anodic bond between the semiconductor wafer and the glass substrate via electrolysis.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.

Abstract: A surface plasmon resonance sensor system including a high refractive index prism, a sensor chip, a light source having multiple wavelengths over a broad range of wavelengths, optical lenses, a photodetector, a data acquisition unit, and as defined herein. The sensor chip can include, for example, a thin layer of silicon and gold on one face of a transparent substrate and the prism adjacent to the opposite face of the transparent substrate. Such an arrangement provides variable penetration depths up to about 1.5 micrometers with a dynamic range for sensing index of refraction changes in a sample that are several times greater than that of a conventional SPR sensor. The disclosure provides methods for using the surface plasmon resonance sensor system for cell assay or chemical assay related applications.