Abstract: The invention provides DNA compositions that relate to transgenic insect resistant maize plants. Also provided are assays for detecting the presence of the maize DAS-59122-7 event based on the DNA sequence of the recombinant construct inserted into the maize genome and the DNA sequences flanking the insertion site. Kits and conditions useful in conducting the assays are provided.

Abstract: Disclosed herein are precursor compounds, composite electrodes comprising the same, and methods of making and use thereof.

Abstract: The invention relates to a drug delivery system for contraception including a steroidal estrogenic compound, a steroidal progestogenic compound or a combination thereof for the purposes of contraception in a subject, and provides for an ultra-low dose delivery of a steroidal estrogenic compound which minimizes or eliminates a burst release effect. The invention also relates to a method of contraception using the drug delivery system and method of manufacturing the drug delivery system.

Abstract: A process of drug shortage prediction includes defining a classifier and loading a listing of drug shortage events at different times in association with different drugs. Over different periods of time, transactions between nodes of the pharmaceutical supply chain are read on a data bus of a digital supply network computing platform, each indicating a receipt of a particular drug by a particular dispensary. Drug shortage events are then correlated with ones of the transactions at a specified duration of time preceding the drug shortage events. Consequently, the classifier can be trained with the correlated transactions annotated as giving rise to the drug shortage events. Finally, the classifier receives queries with newly observed transactions on the data bus and, in response, a likelihood is determined that a drug shortage event for a specific one of the drugs will occur at the specified duration of time following the newly observed transactions.

Abstract: Intelligent query routing may be performed across shards of a scalable database table. A router of a database system may receive an access request directed to one or more database tables. The router may evaluate the access request with respect to metadata obtained for the database tables to determine an assignment distribution of computing resources of the database system to data that can satisfy the access request. The router can select planning locations to perform the access request based on the assignment distribution of the computing resources. The router can cause the access request to be performed according to planning at the selected planning locations.

Abstract: In some implementations, a device may obtain the biometric token associated with an account via a registration procedure associated with a first platform that is associated with a host. The server device may store an indication of the biometric token in a database. The server device may receive a login request associated with the account for a second platform that is associated with the host. The server device may identify that biometric authentication is enabled for the account based on the indication of the biometric token being stored in the database. The server device may provide an authentication challenge associated with the biometric token. The server device may receive a response to the authentication challenge indicating whether the authentication device has authenticated biometric information associated with a user based on the biometric token. The server device may authenticate the login request for the second platform based on the response.

Abstract: The present disclosure relates generally to methods of using modulators of COT (cancer Osaka thyroid) for treating, stabilizing, or lessening the severity or progression of liver disease, in particular, Nonalcoholic fatty liver disease (NAFLD) or nonalcoholic steatohepatitis (NASH).

Abstract: An interband cascade (IC) light emitting device comprising a plurality of interband cascade stages, wherein at least one of the IC stages is constructed to have an electron injector made of one or more QWs, a type-I quantum well (QW) active region, a barrier layer positioned between the active region and the electron injector, a hole injector made of one or more QWs, and a barrier layer positioned between the active region and the hole injector. In at least one embodiment, a type II heterointerface layer is between the electron injector and an adjacent hole injector. The well layer of the type-I QW active region has compressive strain, while the barrier layers which flank the type-I QW active region comprise tensile strain layers. In certain embodiments, the electron injector and the hole injector comprise tensile strained layers.

Abstract: An interband cascade (IC) light emitting device comprising a plurality of interband cascade stages, wherein at least one of the IC stages is constructed to have an electron injector made of one or more QWs, a type-I quantum well (QW) active region, a barrier layer positioned between the active region and the electron injector, a hole injector made of one or more QWs, and a barrier layer positioned between the active region and the hole injector. In at least one embodiment, a type II heterointerface layer is between the electron injector and an adjacent hole injector. The well layer of the type-I QW active region has compressive strain, while the barrier layers which flank the type-I QW active region comprise tensile strain layers. In certain embodiments, the electron injector and the hole injector comprise tensile strained layers.

Abstract: The use of doped or undoped rare-earth silicates, according to the formula MSixOy wherein M is a rare-earth element, in semiconductor technology is disclosed. In particular, gadolinium silicate as a gate dielectric of a metal-insulating-semiconductor device is disclosed. The insulator of the metal-insulating-semiconductor device is fabricated by exposing a suitably cleaned and terminated surface of a semiconductor substrate to a simultaneous or sequential flux of rare-earth atoms, silicon atoms and oxygen atoms, and annealing the resulting rare-earth containing layer. The use of higher dielectric constant material, such as provided by the invention, reduces the tunneling current through the device, since layers of greater thickness can be used.

Abstract: The use of doped or undoped rare-earth silicates, according to the formula MSixOy wherein M is a rare-earth element, in semiconductor technology is disclosed. In particular, gadolinium silicate as a gate dielectric of a metal-insulating-semiconductor device is disclosed. The insulator of the metal-insulating-semiconductor device is fabricated by exposing a suitably cleaned and terminated surface of a semiconductor substrate to a simultaneous or sequential flux of rare-earth atoms, silicon atoms and oxygen atoms, and annealing the resulting rare-earth containing layer. The use of higher dielectric constant material, such as provided by the invention, reduces the tunneling current through the device, since layers of greater thickness can be used.

Abstract: The use of doped or undoped rare-earth silicates, according to the formula MSixOy wherein M is a rare-earth element, in semiconductor technology is disclosed. In particular, gadolinium silicate as a gate dielectric of a metal-insulating-semiconductor device is disclosed. The insulator of the metal-insulating-semiconductor device is fabricated by exposing a suitably cleaned and terminated surface of a semiconductor substrate to a simultaneous or sequential flux of rare-earth atoms, silicon atoms and oxygen atoms, and annealing the resulting rare-earth containing layer. The use of higher dielectric constant material, such as provided by the invention, reduces the tunneling current through the device, since layers of greater thickness can be used.