Patents by Inventor James H. Chiang

James H. Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6358760
    Abstract: A silicon layer is etched using a plasma etcher equipped with an endpoint control device. CF4 and N2 are provided to the plasma etcher at lower flow rates than those typically used during fixed time etching processes. The endpoint control device monitors optical emissions from the etching chamber at a particular wavelength to detect a predetermined change in intensity. When the change in intensity is detected, the etching is terminated.
    Type: Grant
    Filed: June 1, 2000
    Date of Patent: March 19, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Jiahua Huang, Allison Holbrook, James H. Chiang, Sunny Cherian