Abstract: A memory includes byte aligned column redundancy capabilities for use in repairing the memory when a defective column is present. The memory array includes a repair/redundant column for use in repairing the memory when another column of the memory array is defective. The memory also has a redundant write multiplexer to select, when a defective column is present in the memory array, an input data bit to be written to the redundant column. A first input of the redundant write multiplexer may be coupled to receive either the LSB or the MSB of write data associated with the first column group and a second input of the redundant write multiplexer may be coupled to receive either the LSB or the MSB of write data associated with the second column group.