Abstract: The invention provides a polishing pad suitable for polishing or planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polishing layer having a polymeric matrix, a thickness and a polishing track representing a working region of the polishing layer for polishing or planarizing. Radial drainage grooves extend through the polishing track facilitate polishing debris removal through the polishing track and underneath the at least one of semiconductor, optical and magnetic substrates and then beyond the polishing track toward the perimeter of the polishing pad during rotation of the polishing pad.

Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ?6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of ?10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.

Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ?6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of ?10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.

Abstract: A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 10 to 300 msec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 5 to 1,000 m/sec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer; a plug in place endpoint detection window block; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.

Abstract: A multilayer chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.

Abstract: A chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.

Abstract: A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.

Abstract: A method of manufacturing grooved polishing layers for use in chemical mechanical polishing pads is provided, wherein the formation of defects in the polishing layers are minimized.

Abstract: A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.

Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a specific gravity of greater than 0.6; a Shore D hardness of 60 to 90; an elongation to break of 100 to 300%; and, a unique combination of an initial hydrolytic stability and a sustained hydrolytic instability.

Abstract: A multilayer chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.

Abstract: A chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.

Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer; a plug in place endpoint detection window block; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.

Abstract: A method of manufacturing grooved polishing layers for use in chemical mechanical polishing pads is provided, wherein the formation of defects in the polishing layers are minimized.

Abstract: This invention relates in general to fuser for a reproduction apparatus, and more particularly to an adjustable loading mechanism for a printing machine fuser. According to various aspects of the invention, apparatus and methods for loading a printing machine fuser are provided. A loading force for a pressure member and a fuser member may be generated by deflecting a spring relative to a spring support that restrains an end of the spring, the spring support being mounted to an arm body, the arm body comprising a pivot axis and a loading mount acting on one of the pressure member and the fuser member. The loading force may be adjusted by displacing the spring support to adjust a deflection of the spring.