Abstract: Disclosed herein are heterocyclic compounds that inhibit the binding of KRas. Also disclosed are pharmaceutical compositions that include the compounds. Methods of using the KRas inhibitors are disclosed, alone or in combination with other therapeutic agents, for the treatment of autoimmune diseases or conditions, heteroimmune diseases or conditions, cancer, including lymphoma, leukemia, lung cancer, colorectal cancer, pancreatic cancer, and other diseases or conditions dependent on KRas interaction.

Abstract: Described herein is N-[4-[4-(4-morpholinyl)-7H-pyrrolo[2,3-d]pyrimidin-6-yl]phenyl]-4-[[3(R)-[(1-oxo-2-propen-1-yl)amino]-1-piperidinyl]methyl]-2-pyridinecarboxamide, including crystalline forms, solvates, and pharmaceutically acceptable salts thereof. Also disclosed are pharmaceutical compositions that include the compound, as well as methods of using the compound, alone or in combination with other therapeutic agents, for the treatment of autoimmune diseases or conditions, heteroimmune diseases or conditions, cancer, including lymphoma, and inflammatory diseases or conditions.

Abstract: Disclosed herein are heterocyclic compounds that inhibit the activity of FLT3. Also described are specific covalent inhibitors of FLT3. Also disclosed are pharmaceutical compositions that include the compounds. Methods of using the FLT3 inhibitors are disclosed, alone or in combination with other therapeutic agents, for the treatment of proliferative diseases or conditions, including hematological malignancies and other diseases or conditions dependent on FLT3 activity.

Abstract: Arousal events can be determined for a user associated with a wearable device, such as a user wearing a wearable computing device including one or more sensors. The one or more sensors may obtain EDA information that may determine a sympathetic nervous system response of the user, which may be responsive to an arousal event or an activation. Detection of events that increase the EDA response may provide information to the user regarding arousal events and provide recommendations to the user to address the arousal events to decrease their response.

Abstract: Arousal events can be determined for a user associated with a wearable device, such as a user wearing a wearable computing device including one or more sensors. The one or more sensors may obtain EDA information that may determine a sympathetic nervous system response of the user, which may be responsive to an arousal event or an activation. Detection of events that increase the EDA response may provide information to the user regarding arousal events and provide recommendations to the user to address the arousal events to decrease their response.

Abstract: Arousal events can be determined for a user associated with a wearable device, such as a user wearing a wearable computing device including one or more sensors. The one or more sensors may obtain EDA information that may determine a sympathetic nervous system response of the user, which may be responsive to an arousal event or an activation. Detection of events that increase the EDA response may provide information to the user regarding arousal events and provide recommendations to the user to address the arousal events to decrease their response.

Abstract: Arousal events can be determined for a user associated with a wearable device, such as a user wearing a wearable computing device including one or more sensors. The one or more sensors may obtain EDA information that may determine a sympathetic nervous system response of the user, which may be responsive to an arousal event or an activation. Detection of events that increase the EDA response may provide information to the user regarding arousal events and provide recommendations to the user to address the arousal events to decrease their response.

Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.

Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.

Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.