Abstract: Provided are methods, systems, and media for Internet Advertising. Exemplary methods may include: providing an advertisement including a first identifier to a website using at least one of a template and an application programming interface (API), the advertisement to be displayed on the website; receiving a communications session initiated by an end customer using the first identifier, the communications session including a second identifier associated with the end customer; accepting the communications session when the second identifier is not included in a black list; retrieving a record associated with the end customer using the second identifier; determining to provide a promotional message to the end customer using the record; selecting an offer using the record; providing the promotional message to the end customer using the communications session, the promotional message including the offer and a request for an indication of interest.

Abstract: Provided are methods, systems, and media for Internet Advertising. Exemplary methods may include: providing an advertisement including a first identifier to a website using at least one of a template and an application programming interface (API), the advertisement to be displayed on the website; receiving a communications session initiated by an end customer using the first identifier, the communications session including a second identifier associated with the end customer; accepting the communications session when the second identifier is not included in a black list; retrieving a record associated with the end customer using the second identifier; determining to provide a promotional message to the end customer using the record; selecting an offer using the record; providing the promotional message to the end customer using the communications session, the promotional message including the offer and a request for an indication of interest.

Abstract: Provided are methods, systems, and media for Internet Advertising. Exemplary methods may include: providing an advertisement including a first identifier to a website using at least one of a template and an application programming interface (API), the advertisement to be displayed on the website; receiving a communications session initiated by an end customer using the first identifier, the communications session including a second identifier associated with the end customer; accepting the communications session when the second identifier is not included in a black list; retrieving a record associated with the end customer using the second identifier; determining to provide a promotional message to the end customer using the record; selecting an offer using the record; providing the promotional message to the end customer using the communications session, the promotional message including the offer and a request for an indication of interest.

Abstract: Provided are methods, systems, and media for Internet Advertising. Exemplary methods may include: providing an advertisement including a first identifier to a website using at least one of a template and an application programming interface (API), the advertisement to be displayed on the website; receiving a communications session initiated by an end customer using the first identifier, the communications session including a second identifier associated with the end customer; accepting the communications session when the second identifier is not included in a black list; retrieving a record associated with the end customer using the second identifier; determining to provide a promotional message to the end customer using the record; selecting an offer using the record; providing the promotional message to the end customer using the communications session, the promotional message including the offer and a request for an indication of interest.

Abstract: A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component.

Abstract: The present invention is directed to systems and methods for irradiating regions of a thin film sample(s) with laser beam pulses having different energy beam characteristics that are generated and delivered via different optical paths. An exemplary method includes generating laser beam pulses having energy beam characteristics, directing a first pulse onto a first optical path, modulating the pulse's energy beam characteristics, and irradiating at least a portion of a first region of the thin film with the pulse to induce crystallization of the portion of the first region. The method also includes directing a second pulse onto a second optical path, modulating the pulse's energy beam characteristics so as to be different from the energy beam characteristics of the first pulse, and irradiating at least a portion of a second region of the thin film with the second pulse to induce crystallization of the portion of the second region.

Abstract: The present disclosure is directed to methods and systems for processing a thin film samples. In an exemplary method, semiconductor thin films are loaded onto two different loading fixtures, laser beam pulses generated by a laser source system are split into first laser beam pulses and second laser beam pulses, the thin film loaded on one loading fixture is irradiated with the first laser beam pulses to induce crystallization while the thin film loaded on the other loading fixture is irradiated with the second laser beam pulses. In a preferred embodiment, at least a portion of the thin film that is loaded on the first loading fixture is irradiated while at least a portion of the thin film that is loaded on the second loading fixture is also being irradiated. In an exemplary embodiment, the laser source system includes first and second laser sources and an integrator that combines the laser beam pulses generated by the first and second laser sources to form combined laser beam pulses.

Abstract: A method of processing a polycrystalline film on a substrate includes generating laser pulses, directing the laser pulses through a mask to generate patterned laser beams, each having a length l?, a width w?, and a spacing between adjacent beams d?; irradiating a region of the film with the patterned beams, said beams having an intensity sufficient to melt and to induce crystallization of the irradiated portion of the film, wherein the film region is irradiated n times; and after irradiation of each film portion, translating the film and/or the mask, in the x- and y-directions. The distance of translation in the y-direction is about l?/n-?, where ? is a value selected to overlap the beamlets from one irradiation step to the next. The distance of translation in the x-direction is selected such that the film is moved a distance of about ?? after n irradiations, where ??=w?+d?.

Abstract: The present invention is directed to systems and methods for irradiating regions of a thin film sample(s) with laser beam pulses having different energy beam characteristics that are generated and delivered via different optical paths.

Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.

Abstract: Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed.

Abstract: A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component.

Abstract: A process and system for processing a thin film on a sample are provided. In particular, a plurality of separated beams each including beam pulses are generated. At least one first beam of the separated beams is forwarded through a mask to irradiate and heat the thin film sample prior to further irradiation. At least one second beam of the separated beams is then forwarded through a mask to further irradiate the thin film sample. Additional separated beams are sent through a mask to produce and further irradiate the thin film until the combined intensity of the beams impinging on the sample is sufficient to melt a section of the thin film throughout its entire thickness.

Abstract: An arrangement, process and mask for implementing single-scan continuous motion sequential lateral solidification of a thin film provided on a sample such that artifacts formed at the edges of the beamlets irradiating the thin film are significantly reduced. According to this invention, the edge areas of the previously irradiated and resolidified areas which likely have artifacts provided therein are overlapped by the subsequent beamlets. In this manner, the edge areas of the previously resolidified irradiated areas and artifacts therein are completely melted throughout their thickness. At least the subsequent beamlets are shaped such that the grains of the previously irradiated and resolidified areas which border the edge areas melted by the subsequent beamlets grow into these resolidifying edges areas so as to substantially reduce or eliminate the artifacts.

Abstract: A system, method and masking arrangement are provided of enhancing the width of polycrystalline grains produced using sequential lateral solidification using a modified mask pattern is disclosed. One exemplary mask pattern employs rows of diamond or circular shaped areas in order to control the width of the grain perpendicular to the direction of primary crystallization.

Abstract: A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component.

Abstract: System and method generating a polycrystalline thin film with a particular crystalline orientation for use as thin film transistors, microelectronic devices and the like. In one exemplary embodiment, a polycrystalline silicon thin film that has a substantially uniform crystalline orientation is produced so that its crystals are provided in at least one direction. The crystalline orientation may be any low index orientation and may be achieved with sequential lateral solidification. The polycrystalline thin film may then be crystallized in a direction that is perpendicular to the first direction by, e.g., a sequential lateral solidification procedure so that the crystalline orientation is approximately the same as the first direction, and is substantially uniform in all directions.

Abstract: Process and system for processing a thin film sample, as well as at least one portion of the thin film structure are provided. Irradiation beam pulses can be shaped to define at least one line-type beam pulse, which includes a leading portion, a top portion and a trailing portion, in which at least one part has an intensity sufficient to at least partially melt a film sample. Irradiating a first portion of the film sample to at least partially melt the first portion, and allowing the first portion to resolidify and crystallize to form an approximately uniform area therein. After the irradiation of the first portion of the film sample, irradiating a second portion using a second one of the line-type beam pulses to at least partially melt the second portion, and allowing the second portion to resolidify and crystallize to form an approximately uniform area therein.

Abstract: A method and system for processing at least one portion of a thin film sample on a substrate, with such portion of the film sample having a first boundary and a second boundary. One or more first areas of the film sample are successively irradiated by first beamlets of an irradiation beam pulse so that the first areas are melted throughout their thickness and allowed to re-solidify and crystallize thereby having grains grown therein. Thereafter, one or more second areas of the film sample are irradiated by second beamlets so that the second areas are melted throughout their thickness. At least two of the second areas partially overlap a particular area of the re-solidified and crystallized first areas such that the grains provided in the particular area grow into each of the at least two second areas upon re-solidification thereof.

Abstract: Methods of making a polycrystalline silicon thin-film transistor having a uniform microstructure. One exemplary method requires receiving a polycrystalline silicon thin film having a grain structure which is periodic in at least a first direction, and placing at least portions (410, 420) of one or more thin-film transistors on the received film such that they are tilted relative to the periodic structure of the thin film.