Abstract: An apparatus for electroplating a metal on a semiconductor substrate with high control over plated thickness on a die-level includes an ionically resistive ionically permeable element (e.g., a plate with channels), where the element allows for flow of ionic current through the element towards the substrate during electroplating, where the element includes a plurality of regions, each region having a pattern of varied local resistance, and where the pattern of varied local resistance repeats in at least two regions. An electroplating method includes providing a semiconductor substrate to an electroplating apparatus having an ionically resistive ionically permeable element or a grid-like shield having a pattern correlating with a pattern of features on the substrate, and plating metal, while the pattern on the substrate remains spatially aligned with the pattern of the element or the grid-like shield for at least a portion of the total electroplating time.

Abstract: In some examples, an electroplating apparatus is provided for depositing a metal layer on a substrate. An example electroplating apparatus comprises a plating cell to receive a plating solution, an electrode, a counter electrode, a substrate holding fixture, a resistive element, and a de-bubbler device supportable rotatably adjacent the resistive element to generate or direct a flow of plating solution through the resistive element to release trapped bubbles.

Abstract: Various embodiments described herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. In some cases, one or more membrane may be provided in contact with an ionically resistive element to minimize the degree to which electrolyte passes backwards from a cross flow manifold, through the ionically resistive element, and into an ionically resistive element manifold during electroplating. The membrane may be designed to route electrolyte in a desired manner in some embodiments. In these or other cases, one or more baffles may be provided in the ionically resistive element manifold to reduce the degree to which electrolyte is able to bypass the cross flow manifold by flowing back through the ionically resistive element and across the electroplating cell within the ionically resistive element manifold. These techniques can be used to improve the uniformity of electroplating results.

Abstract: An active (consumable) anode includes, in one aspect, a generally annular body and a protrusion used for connecting the anode to the power supply, where the protrusion extends outward from the generally annular body of the anode. The compositions of the generally annular body and of the protrusion are the same, and, in some embodiments, the anode is a one-piece anode that does not include any welding seams. Such structure results in reduced voltage fluctuations during plating and in improved control over plating uniformity. In some embodiments, the anode is a copper anode, a cobalt anode, or a nickel anode machined from a single sheet of anode-grade metal. The provided anode can be used in an electroplating apparatus as a secondary, peripherally disposed anode, in conjunction with a more centrally located primary anode. The provided anode is configured to modulate electroplating at the edge of the substrate.

Abstract: A valve assembly used with a process chamber for depositing a film on a wafer. A valve body surrounds a bore and includes an inlet, a first outlet and a second outlet, at least one of them exiting into the process chamber. A piston includes a first section having a first flow path, and a second section having a second flow path. A linear motion actuator is adapted to couple with the piston and controls linear movement of the piston through the bore between a first position and a second position. In the first position, the first section of the piston is aligned with the inlet such that fluid flows to the first outlet via the first flow path. In the second position, the second section of the piston is aligned with the inlet such that fluid flows to the second outlet via the second flow path.

Abstract: An active (consumable) anode includes, in one aspect, a generally annular body and a protrusion used for connecting the anode to the power supply, where the protrusion extends outward from the generally annular body of the anode. The compositions of the generally annular body and of the protrusion are the same, and, in some embodiments, the anode is a one-piece anode that does not include any welding seams. Such structure results in reduced voltage fluctuations during plating and in improved control over plating uniformity. In some embodiments, the anode is a copper anode, a cobalt anode, or a nickel anode machined from a single sheet of anode-grade metal. The provided anode can be used in an electroplating apparatus as a secondary, peripherally disposed anode, in conjunction with a more centrally located primary anode. The provided anode is configured to modulate electroplating at the edge of the substrate.

Abstract: A valve assembly used with a process chamber for depositing a film on a wafer. A valve body surrounds a bore and includes an inlet, a first outlet and a second outlet, at least one of them exiting into the process chamber. A piston includes a first section having a first flow path, and a second section having a second flow path. A linear motion actuator is adapted to couple with the piston and controls linear movement of the piston through the bore between a first position and a second position. In the first position, the first section of the piston is aligned with the inlet such that fluid flows to the first outlet via the first flow path. In the second position, the second section of the piston is aligned with the inlet such that fluid flows to the second outlet via the second flow path.

Abstract: Various embodiments described herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. In some cases, one or more membrane may be provided in contact with an ionically resistive element to minimize the degree to which electrolyte passes backwards from a cross flow manifold, through the ionically resistive element, and into an ionically resistive element manifold during electroplating. The membrane may be designed to route electrolyte in a desired manner in some embodiments. In these or other cases, one or more baffles may be provided in the ionically resistive element manifold to reduce the degree to which electrolyte is able to bypass the cross flow manifold by flowing back through the ionically resistive element and across the electroplating cell within the ionically resistive element manifold. These techniques can be used to improve the uniformity of electroplating results.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. Also typically present is an edge flow element configured to direct electrolyte into a corner formed between the substrate and substrate holder. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet.

Abstract: Methods and apparatus for electroplating substrates are described herein. In some cases, an ionically resistive element is positioned near the substrate, creating a cross flow manifold between the ionically resistive element and the substrate. During plating, fluid may enter the cross flow manifold upward through the channels in the ionically resistive element, and (optionally) laterally through a cross flow side inlet. The flow paths combine in the cross flow manifold and exit at the cross flow outlet, which may be positioned opposite the cross flow inlet. In some embodiments, the ionically resistive element may include two or more flow regions, where the flow through each flow region is independently controllable. In these or other embodiments, an electrolyte jet may be included to flow additional electrolyte toward the substrate at a particular radial location or locations during plating. In some embodiments, the ionically resistive element may be omitted.

Abstract: Disclosed herein are methods of electroplating which may include placing a substrate, an anode, and an electroplating solution in an electroplating cell such that the substrate and the anode are located on opposite sides of a fluidically-permeable plate, setting the configuration of one or more seals which, when in their sealing configuration, substantially seal pores of the fluidically-permeable plate, and applying an electrical potential between the anode and the first substrate sufficient to cause electroplating on the first substrate such that the rate of electroplating in an edge region of the first substrate is affected by the configuration of the one or more seals. Also disclosed herein are apparatuses for electroplating which may include one or more seals for substantially sealing a subset of the pores in a fluidically-permeable plate whose sealing configuration affects a rate of electroplating in an edge region of the substrate.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. Also typically present is an edge flow element configured to direct electrolyte into a corner formed between the substrate and substrate holder. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet.

Abstract: An apparatus for electroplating metal on a substrate while controlling plating uniformity includes in one aspect: a plating chamber having anolyte and catholyte compartments separated by a membrane; a primary anode positioned in the anolyte compartment; an ionically resistive ionically permeable element positioned between the membrane and a substrate in the catholyte compartment; and a secondary electrode configured to donate and/or divert plating current to and/or from the substrate, wherein the secondary electrode is positioned such that the donated and/or diverted plating current does not cross the membrane separating the anolyte and catholyte compartments, but passes through the ionically resistive ionically permeable element. In some embodiments the secondary electrode is an azimuthally symmetrical anode (e.g., a ring positioned in a separate compartment around the periphery of the plating chamber) that can be dynamically controlled during electroplating.

Abstract: An apparatus for electroplating metal on a substrate while controlling plating uniformity includes in one aspect: a plating chamber having anolyte and catholyte compartments separated by a membrane; a primary anode positioned in the anolyte compartment; an ionically resistive ionically permeable element positioned between the membrane and a substrate in the catholyte compartment; and a secondary electrode configured to donate and/or divert plating current to and/or from the substrate, wherein the secondary electrode is positioned such that the donated and/or diverted plating current does not cross the membrane separating the anolyte and catholyte compartments, but passes through the ionically resistive ionically permeable element. In some embodiments the secondary electrode is an azimuthally symmetrical anode (e.g., a ring positioned in a separate compartment around the periphery of the plating chamber) that can be dynamically controlled during electroplating.

Abstract: Disclosed herein are methods of electroplating which may include placing a substrate, an anode, and an electroplating solution in an electroplating cell such that the substrate and the anode are located on opposite sides of a fluidically-permeable plate, setting the configuration of one or more seals which, when in their sealing configuration, substantially seal pores of the fluidically-permeable plate, and applying an electrical potential between the anode and the first substrate sufficient to cause electroplating on the first substrate such that the rate of electroplating in an edge region of the first substrate is affected by the configuration of the one or more seals. Also disclosed herein are apparatuses for electroplating which may include one or more seals for substantially sealing a subset of the pores in a fluidically-permeable plate whose sealing configuration affects a rate of electroplating in an edge region of the substrate.