Abstract: A method for protecting a refractory metal silicide during high-temperature processing using a dual-layer cap of silicon oxide and silicon nitride. The problem of a silicon nitride protective layer detaching itself from an underlying refractory metal silicide layer during high-temperature processing, thus allowing tungsten atoms within the layer to oxidize, is solved by laying down a silicon oxide layer beneath the silicon nitride layer. The oxide layer acts as a mechanical stress relief layer between the refractory metal silicide and the silicon nitride layer, preventing the lifting of the nitride layer during high-temperature processing steps.